Total-energy calculations of semiconductor surface reconstructions

Self-Consistent Equations Including Exchange and Correlation Effects

1965 • 57,451 citations

Self-interaction correction to density-functional approximations for many-electron systems

1981 • 19,782 citations

Accurate spin-dependent electron liquid correlation energies for local spin density calculations: a critical analysis

1980 • 19,673 citations

Density-functional approximation for the correlation energy of the inhomogeneous electron gas

1986 • 17,918 citations

The Nature of the Chemical Bond

1939 • 13,296 citations

Density-functional theory of atoms and molecules

1989 • 12,968 citations

Density Functional Theory of Atoms and Molecules

1980 • 12,196 citations

Unified Approach for Molecular Dynamics and Density-Functional Theory

1985 • 10,277 citations

An all-electron numerical method for solving the local density functional for polyatomic molecules

1990 • 9,669 citations

Ab initio molecular orbital theory

1976 • 7,942 citations

Simplified LCAO Method for the Periodic Potential Problem

1954 • 4,907 citations

Ab initio molecular orbital theory

1987 • 4,618 citations

Zur Quantentheorie der Molekeln

1927 • 4,387 citations

Electronic structure and the properties of solids

1980 • 4,228 citations

Accurate and simple density functional for the electronic exchange energy: Generalized gradient approximation

1986 • 4,006 citations

Metal-semiconductor Contacts

2005 • 3,989 citations

The density functional formalism, its applications and prospects

1989 • 3,845 citations

Approximate molecular orbital theory

1970 • 3,604 citations

Forces in Molecules

1939 • 3,570 citations

Exchange and correlation in atoms, molecules, and solids by the spin-density-functional formalism

1976 • 3,562 citations

Density Functional Theory

1990 • 2,488 citations

Analysis and simulation of semiconductor devices

1985 • 2,109 citations

Quantisierung als Eigenwertproblem

1926 • 1,919 citations

Ionicity of the Chemical Bond in Crystals

1970 • 1,798 citations

Quantum mechanics of many-electron systems

1929 • 1,690 citations

Density functional calculations of molecular bond energies

1986 • 1,632 citations

Physics at Surfaces

1988 • 1,445 citations

Structural analysis of Si(111)-7×7 by UHV-transmission electron diffraction and microscopy

1985 • 1,302 citations

The Theory of Complex Spectra

1929 • 1,198 citations

Chemistry in Two Dimensions: Surfaces

1981 • 1,161 citations

Beyond the local-density approximation in calculations of ground-state electronic properties

1983 • 1,156 citations

Metal-semiconductor contacts

1974 • 1,134 citations

Structure analysis of Si(111)-7 × 7 reconstructed surface by transmission electron diffraction

1985 • 1,089 citations

The self-consistent field for molecules and solids

1974 • 1,056 citations

Atomic and Electronic Structures of Reconstructed Si(100) Surfaces

1979 • 1,049 citations

A semi-empirical tight-binding theory of the electronic structure of semiconductors

1982 • 977 citations

The structure and properties of metal-semiconductor interfaces

1982 • 908 citations

Stabilities of single-layer and bilayer steps on Si(001) surfaces

1987 • 901 citations

Semiconductor Surface Physics

1957 • 878 citations

Structure and Adsorption Characteristics of Clean Surfaces of Germanium and Silicon

1959 • 873 citations

Scanning tunneling microscopy of Si(001)

1986 • 846 citations

New<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>π</mml:mi></mml:math>-Bonded Chain Model for Si(111)-(2×1) Surface

1981 • 845 citations

Electron counting model and its application to island structures on molecular-beam epitaxy grown GaAs(001) and ZnSe(001)

1989 • 758 citations

Quantisierung als Eigenwertproblem

1926 • 718 citations

Spontaneous Formation of Stress Domains on Crystal Surfaces

1988 • 682 citations

First-principles study of the atomic reconstructions and energies of Ga- and As-stabilized GaAs(100) surfaces

1988 • 681 citations

Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy

1990 • 661 citations

Quantisierung als Eigenwertproblem

1926 • 655 citations

Si(001) Dimer Structure Observed with Scanning Tunneling Microscopy

1985 • 650 citations

Electronic Structure and Optical Properties of Semiconductors

1989 • 643 citations

Tight-binding models and density-functional theory

1989 • 640 citations

Electronic Structure of the Si(111)2 × 1 Surface by Scanning-Tunneling Microscopy

1986 • 622 citations

Semiconductor surface physics

1958 • 607 citations

Ion beam crystallography of surfaces and interfaces

1985 • 599 citations

Molecular dynamics without effective potentials via the Car-Parrinello approach

1990 • 592 citations

Quantisierung als Eigenwertproblem

1926 • 563 citations

Structure of GaAs(001)<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>(</mml:mo><mml:mn>2</mml:mn><mml:mn /><mml:mo>×</mml:mo><mml:mn>4</mml:mn><mml:mo>)</mml:mo><mml:mo>−</mml:mo><mml:mi>c</mml:mi><mml:mo>(</mml:mo><mml:mn>2</mml:mn><mml:mn /><mml:mo>×</mml:mo><mml:mn>8</mml:mn><mml:mo>)</mml:mo></mml:math>Determined by Scanning Tunneling Microscopy

1988 • 545 citations

Low-Energy Electron Diffraction

1986 • 530 citations

Polar-on-nonpolar epitaxy

1987 • 493 citations

Atomic structure of GaAs(100)-(2×1) and (2×4) reconstructed surfaces

1987 • 448 citations

Self-consistent pseudopotential calculations for Si (111) surfaces: Unreconstructed (1×1) and reconstructed (2×1) model structures

1975 • 442 citations

Reconstruction of Semiconductor Surfaces: Buckling, Ionicity, and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>π</mml:mi></mml:math>-Bonded Chains

1982 • 440 citations

Surface Structures and Properties of Diamond-Structure Semiconductors

1961 • 409 citations

Structural, Dymanical, and Electronic Properties of Amorphous Silicon: Anab initioMolecular-Dynamics Study

1988 • 378 citations

Energy-Minimization Approach to the Atomic Geometry of Semiconductor Surfaces

1978 • 376 citations

The Challenge of d and f Electrons

1989 • 372 citations

Passing the one-billion limit in full configuration-interaction (FCI) calculations

1990 • 358 citations

Origin of surface states on Si(111)(7×7)

1986 • 342 citations

Geometry-Dependent<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">Si</mml:mi><mml:mn /><mml:mo>(</mml:mo><mml:mn>2</mml:mn><mml:mi>p</mml:mi><mml:mo>)</mml:mo><mml:mn /></mml:math>Surface Core-Level Excitations for Si(111) and Si(100) Surfaces

1980 • 335 citations

X-Ray Diffraction Study of the Ge(001) Reconstructed Surface

1981 • 334 citations

Surface stoichiometry and structure of GaAs

1974 • 331 citations

(110) surface atomic structures of covalent and ionic semiconductors

1979 • 330 citations

Theoretical determination of surface atomic geometry: Si(001)-(2×1)

1981 • 329 citations

Theoretical study of the atomic structure of silicon (211), (311), and (331) surfaces

1984 • 322 citations

Surface reconstruction on semiconductors

1976 • 320 citations

Composition and structure of differently prepared GaAs(100) surfaces studied by LEED and AES

1978 • 313 citations

New dimerized-chain model for the reconstruction of the diamond (111)-(2 × 1) surface

1982 • 294 citations

Reconstructions of GaAs(1¯ 1¯ 1¯) surfaces observed by scanning tunneling microscopy

1990 • 291 citations

Binding and diffusion of a Si adatom on the Si(100) surface

1991 • 288 citations

The Structure of Surfaces

1986 • 282 citations

Low-Energy Electron Diffraction Study of Silicon Surface Structures

1962 • 278 citations

Structural Properties of Cleaved Silicon and Germanium Surfaces

1963 • 278 citations

Adsorption of boron on Si(111): Its effect on surface electronic states and reconstruction

1989 • 277 citations

Real-space observation ofπ-bonded chains and surface disorder on Si(111)2×1

1986 • 273 citations

<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">Si</mml:mi><mml:mn /><mml:mo>(</mml:mo><mml:mn>111</mml:mn><mml:mo>)</mml:mo><mml:mn /><mml:msqrt><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msqrt><mml:mo>×</mml:mo><mml:msqrt><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msqrt></mml:math>-Al: An Adatom-Induced Reconstruction

1984 • 272 citations

Reconstruction Mechanism and Surface-State Dispersion for Si(111)-(2×1)

1982 • 269 citations

Tunneling microscopy of Ge(001)

1987 • 266 citations

Photoemission studies of intrinsic surface states on Si(100)

1979 • 262 citations

Photoelectron spectroscopy of surface states on semiconductor surfaces

1988 • 262 citations

Theory of reconstruction induced subsurface strain — application to Si(100)

1978 • 257 citations

Use of LEED Apparatus for the Detection and Identification of Surface Contaminants

1967 • 256 citations

Semiconductor surface structures

1983 • 256 citations

Surface States and Surface Bonds of Si(111)

1973 • 254 citations

Differential Reflectivity of Si(111)2×1 Surface with Polarized Light: A Test for Surface Structure

1984 • 249 citations

Electronic and geometric structure of Si(111)-(7 × 7) and Si(001) surfaces

1987 • 249 citations

Pseudopotential Hartree-Fock study of seventeen III-V and IV-IV semiconductors

1991 • 245 citations

Theory of the Third-Order Elastic Constants of Diamond-Like Crystals

1966 • 244 citations

Surface doping and stabilization of Si(111) with boron

1989 • 243 citations

Structures of Clean Surfaces of Germanium and Silicon. I

1963 • 242 citations

Ab initio Hartree-Fock calculations for periodic compounds: application to semiconductors

1990 • 241 citations

Geometric and electronic structure of antimony on the GaAs(110) surface studied by scanning tunneling microscopy

1989 • 237 citations

Surfaces of silicon

1987 • 237 citations

Atomic densities of states near Si (111) surfaces

1976 • 232 citations

Si(100) surfaces: Atomic and electronic structures

1979 • 231 citations

New tight-binding parameters for covalent solids obtained using Louie peripheral states

1981 • 231 citations

Si(100) Surface under an Externally Applied Stress

1988 • 230 citations

Dimer–adatom–stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2×8) to Si(111)-(2×2), -(5×5), -(7×7), and -(9×9) with scanning tunneling microscopy

1989 • 230 citations

2. Quantisierung als Eigenwertproblem

1969 • 230 citations

Sb overlayers on (110) surfaces of III-V semiconductors: Total-energy minimization and surface electronic structure

1985 • 229 citations

Experimental Evidence for One Highly Dispersive Dangling-Bond Band on Si(111) 2 × 1

1982 • 226 citations

The electronic structure of solid surfaces

1976 • 225 citations

Symmetric arsenic dimers on the Si(100) surface

1986 • 224 citations

Computer modeling of Si and SiC surfaces and surface processes relevant to crystal growth from the vapor

1984 • 224 citations

Calculated atomic structures and electronic properties of GaP, InP, GaAs, and InAs (110) surfaces

1991 • 221 citations

Ab initiotheory of polar semiconductor surfaces. I. Methodology and the (22) reconstructions of GaAs(111)

1987 • 221 citations

Low-energy electron diffraction analysis of the Si(111)7×7 structure

1988 • 215 citations

Surface states on Si(111)-(2×1)

1981 • 213 citations

Vacancy-Buckling Model for the (2×2) GaAs(111) Surface

1984 • 210 citations

Physics of III-V compounds

1965 • 208 citations

Structure determination of the Si(111):B(√3×√3)R30° surface: Subsurface substitutional doping

1989 • 207 citations

Photoelectron diffraction study of Si(001) 2 × 1-K surface: Existence of a potassium double layer

1988 • 206 citations

Unoccupied surface states revealing the Si(111)√3 √3-Al, -Ga, and -In adatom geometries

1987 • 202 citations

Geometric and electronic properties of Cs structures on III-V (110) surfaces: From 1D and 2D insulators to 3D metals

1991 • 202 citations

(2 × 1) reconstructed Si(001) surface: Self-consistent calculations of dimer models

1980 • 201 citations

Semiconductor Surface Reconstruction: The Rippled Geometry of GaAs(110)

1976 • 201 citations

Model-Independent Structure Determination of the InSb(111)2×2 Surface with Use of Synchrotron X-Ray Diffraction

1985 • 201 citations

Tunneling Images of Germanium Surface Reconstructions and Phase Boundaries

1985 • 200 citations

<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">GaAs</mml:mi><mml:mn /><mml:mo>(</mml:mo><mml:mn>001</mml:mn><mml:mo>)</mml:mo><mml:mn /><mml:mo>−</mml:mo><mml:mi>c</mml:mi><mml:mo>(</mml:mo><mml:mn>4</mml:mn><mml:mn /><mml:mo>×</mml:mo><mml:mn>4</mml:mn><mml:mo>)</mml:mo></mml:math>: A chemisorbed structure

1983 • 199 citations

Determination of Surface Structure by LEED

1985 • 197 citations

Atomic and electronic contributions to Si(111)-(7×7) scanning-tunneling-microscopy images

1986 • 196 citations

Absence of large compressive stress on Si(111)

1987 • 193 citations

First-principles calculations of atomic and electronic structure of the GaAs(110) surface

1988 • 193 citations

Si(111)-7×7 surface: Energy-minimization calculation for the dimer–adatom–stacking-fault model

1987 • 191 citations

Reviews in Computational Chemistry

1991 • 190 citations

Total energy and stress of metal and semiconductor surfaces

1989 • 187 citations

Surface bond angle and bond lengths of rearranged As and Ga atoms on GaAs(110)

1978 • 186 citations

An electron diffraction study of the structure of silicon (100)

1978 • 186 citations

Low-Energy Ion Scattering from the Si(001) Surface

1982 • 185 citations

Structural Phase Diagrams for the Surface of a Solid: A Total-Energy, Renormalization-Group Approach

1983 • 185 citations

Measurement of Overlayer-Plasmon Dispersion in K Chains Adsorbed on Si(001)2×1

1984 • 183 citations

Possible structures for clean, annealed surfaces of germanium and silicon

1964 • 182 citations

AB initio hartree-fock study of the MgO(001) surface

1986 • 181 citations

Calculation of lattice dynamical properties from electronic energies: Application to C, Si and Ge

1976 • 181 citations

Inverse photoemission from semiconductors

1990 • 180 citations

Al on GaAs(110) interface: Possibility of adatom cluster formation

1981 • 179 citations

Electronic correlation and the Si(100) surface: Buckling versus nonbuckling

1982 • 179 citations

Surface states and reconstruction on Ge(001)

1985 • 178 citations

Surface-state band structure of the Si(100)2×1 surface studied with polarization-dependent angle-resolved photoemission on single-domain surfaces

1990 • 178 citations

Aluminum on the Si(100) surface: Growth of the first monolayer

1991 • 175 citations

Ion beam crystallography of silicon surfaces II. Si(100)-(2 × 1)

1983 • 173 citations

Origins of stress on elemental and chemisorbed semiconductor surfaces

1989 • 172 citations

Geometrical and electronic structure of Si(001) and Si(111) surfaces: A status report

1980 • 171 citations

Dynamical analysis of low-energy electron diffraction intensities from GaAs(110)-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi><mml:mo>(</mml:mo><mml:mn>1</mml:mn><mml:mn /><mml:mo>×</mml:mo><mml:mn>1</mml:mn><mml:mo>)</mml:mo></mml:math>-Sb(1 ML)

1982 • 171 citations

Structural, electronic, and vibrational properties of Si(111)-2×1 fromab initiomolecular dynamics

1990 • 170 citations

Surface electronic structure of GaAs(001)-(2×4): Angle-resolved photoemission and tight-binding calculations

1982 • 169 citations

Elementary prediction of linear combination of atomic orbitals matrix elements

1979 • 167 citations

Electronic structure and optical properties of semiconductors

1989 • 161 citations

(110) surface states of GaAs: Sensitivity of electronic structure to surface structure

1978 • 161 citations

Surface Potential, Charge Density, and Ionization Potential for Si(111)-a Self-Consistent Calculation

1974 • 161 citations

Direct Measurement of the Polarization Dependence of Si(111)2×1 Surface-State Absorption by Use of Photothermal Displacement Spectroscopy

1984 • 160 citations

The roughness of cleaved semiconductor surfaces

1973 • 158 citations

New Reconstructions on Silicon (111) Surfaces

1986 • 157 citations

Ab initiomolecular dynamics on the Ge(100) surface

1987 • 155 citations

Pseudopotential theory of atoms and molecules

1986 • 154 citations

Experimental studies of the dangling- and dimer-bond-related surface electron bands on Si(100) (2×1)

1981 • 152 citations

Atomic structure of the Si(001)-(2×1) surface

1990 • 151 citations

First-principles study of sulfur passivation of GaAs(001) surfaces

1990 • 151 citations

Surface spectroscopy of Schottky-barrier formation on Si(111) 7 × 7: Photoemission studies of filled surface states and band bending

1976 • 150 citations

Electronic structure of the annealed Ge(111) and Si(111) surfaces: Similarities in local bonding

1981 • 149 citations

Chemisorption bonding, site preference, and chain formation at the K/Si(001)2×1interface

1989 • 148 citations

Spin Polarization and Atomic Geometry of the Si(111) Surface

1981 • 145 citations

Low energy electron diffraction studies on Ge and Na-covered Ge

1967 • 143 citations

Calculation of low-energy-electron-diffraction intensities from<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">ZnO</mml:mi><mml:mi /><mml:mo>(</mml:mo><mml:mn>10</mml:mn><mml:mn /><mml:mrow><mml:mrow><mml:mover><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mi>¯</mml:mi></mml:mrow></mml:mover></mml:mrow></mml:mrow><mml:mn>0</mml:mn></mml:math>). II. Influence of calculational procedure, model potential, and second-layer structural …

1978 • 143 citations

Self-Consistent Pseudopotential for Si

1973 • 141 citations

Dynamical calculation of low-energy electron diffraction intensities from GaAs(110): Influence of boundary conditions, exchange potential, lattice vibrations, and multilayer reconstructions

1979 • 140 citations

Calculation of the atomic geometries of the (110) surfaces of III–V compound semiconductors

1985 • 139 citations

Atomic forces from electronic energies via the Hellmann-Feynman theorem, with application to semiconductor (110) surface relaxation

1986 • 136 citations

Low energy electron diffraction study of the polar {111} surfaces of GaAs and GaSb

1966 • 136 citations

Reconstructions of GaAs and AlAs surfaces as a function of metal to As ratio

1981 • 135 citations

Treatment of Coulomb interactions in Hartree-Fock calculations of periodic systems

1983 • 134 citations

Atomic structure of Si{001}2×1

1983 • 133 citations

Low-Energy Electron-Diffraction Study of the Cleaved (110) Surfaces of InSb, InAs, GaAs, and GaSb

1964 • 131 citations

Theory of quasiparticle surface states in semiconductor surfaces

1988 • 129 citations

Rheed intensity analysis of Si(111)7 × 7 at one-beam condition

1987 • 129 citations

Electronic excitations in K monolayer adsorbed on Si(100) 2 × 1

1983 • 128 citations

Ab initio characterization of the (0001) and (101̄0) crystal faces of α-alumina

1989 • 124 citations

Catalysis at Surfaces

1988 • 124 citations

7×7 Reconstruction of Ge(111) Surfaces under Compressive Strain

1985 • 123 citations

Biatomic Steps on (001) Silicon Surfaces

1986 • 123 citations

Atomic geometry and surface-state spectrum for Ge(111)-(2×1)

1983 • 122 citations

A LEED study of Ge(111); a high-temperature incommensurate structure

1985 • 121 citations

Three approaches to electron correlation in atoms

1970 • 121 citations

Proposal for symmetric dimers at the Si(100)-2×1 surface

1989 • 120 citations

Cleavage faces of wurtzite CdS and CdSe: Surface relaxation and electronic structure

1988 • 119 citations

Structure of low-coverage phases of Al, Ga, and In on Si(100)

1991 • 116 citations

Semiconductor-surface restoration by valence-mending adsorbates: Application to Si(100):S and Si(100):Se

1991 • 114 citations

Model for the energetics of Si and Ge (111) surfaces

1987 • 113 citations

Metal-Insulator Transition on the Ge(001) Surface

1984 • 111 citations

GaAs(111)A-(2×2) reconstruction studied by scanning tunneling microscopy

1990 • 110 citations

Bonding at the K/Si(100) 2×1 interface: A surface extended x-ray-absorption fine-structure study

1988 • 110 citations

Atomic geometry of cleavage surfaces of tetrahedrally coordinated compound semiconductors

1976 • 109 citations

Leed studies of vicinal surfaces of silicon

1979 • 109 citations

Studies on an (NH₄)₂S_x-Treated GaAs Surface Using AES, LEELS and RHEED

1989 • 105 citations

Atomic structure of an impurity-stabilized Si{111} surface: Refinement using a combined-layer method

1980 • 105 citations

Indium-induced reconstructions of the Si(100) surface

1991 • 105 citations

Pseudopotentials for non-local-density functionals

1991 • 105 citations

Inorganic Chemistry: A guide to advanced study

1960 • 104 citations

Ion Beam Crystallography at the Si(100) Surface

1981 • 104 citations

Structure of positive impurity ions in liquid helium

1977 • 103 citations

Self-consistent electronic structure of semi-infinite Si(001) (2×1) and Ge(001) (2×1) with model calculations for scanning tunneling microscopy

1987 • 102 citations

The atomic geometry of GaAs(110) revisited

1983 • 101 citations

Intrinsic Surface States in Semiconductors. I. Diamond-Type Crystals

1969 • 100 citations

Surface structures and growth mechanism of Ga ON Si(100) determined by LEED and Auger electron spectroscopy

1988 • 100 citations

Measurement of the Angle of Dangling-Bond Photoemission from Cleaved Silicon

1974 • 100 citations

Simulation of silicon clusters and surfaces via tight-binding molecular dynamics

1989 • 100 citations

On the structure of the laser irradiated Si(111)-(1 × 1) surface

1982 • 99 citations

Composition, structure, surface states, and O2 sticking coefficient for differently prepared GaAs(1̄1̄1̄)As surfaces

1977 • 98 citations

X-ray standing-wave and tunneling-microscope location of gallium atoms on a silicon surface

1989 • 97 citations

Core-Level Binding-Energy Shifts Due to Reconstruction on the Si(111) 2 × 1 Surface

1980 • 95 citations

Structure, Stability, and Origin of (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>2</mml:mn><mml:mo>×</mml:mo><mml:mi>n</mml:mi></mml:math>) Phases on Si(100)

1986 • 95 citations

Dynamical low-energy electron-diffraction analysis of bismuth and antimony epitaxy on GaAs(110)

1990 • 94 citations

Surface metallization of silicon by potassium adsorption on Si(001)-(2×1)

1988 • 94 citations

Electronic structure of silicon surfaces: Clean and with ordered overlayers

1991 • 94 citations

Surface Phonons on GaAs(110) Measured by Inelastic Helium Atom Scattering

1987 • 93 citations

Atomic and electronic structures of GaAs(110) and their alkali-adsorption-induced changes

1991 • 92 citations

Auger electron spectroscopy of Si

1970 • 91 citations

Atomically Clean Surfaces by Pulsed Laser Bombardment

1969 • 91 citations

Theoretical studies of Si and GaAs surfaces and initial steps in the oxidation

1978 • 91 citations

Semiconductor surfaces

1982 • 90 citations

Molecular-dynamics simulation of cluster and atom deposition on silicon (111)

1988 • 90 citations

Electron states of an Sb-ordered overlayer on GaAs(110)

1983 • 89 citations

Atomic and Electronic Structure of the 7 × 7 Reconstructed Si (111) Surface

1980 • 89 citations

New<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>c</mml:mi><mml:mo>−</mml:mo><mml:mn>2</mml:mn><mml:mo>×</mml:mo><mml:mn>8</mml:mn></mml:math>unit cell for the Ge(111) surface

1981 • 88 citations

Reconstruction of steps on the Si(111)2×1 surface

1987 • 88 citations

Cluster calculations of the surface dimer structure on Si(100) surfaces

1980 • 88 citations

Column III and V elements on GaAs (110): Bonding and adatom-adatom interaction

1980 • 87 citations

π-bonded molecular and chain models for the Si(111) surface

1982 • 87 citations

Surface structure and long-range order of the Ge(111)-c(2×8) reconstruction

1988 • 86 citations

Intrinsic surface states of (110) surfaces of group IV and III-V semiconductors

1974 • 86 citations

Low-Energy Electron Diffraction Determination of the Atomic Arrangement on Impurity-Stabilized Unreconstructed Si{111} Surfaces

1976 • 86 citations

Epitaxy of semiconductor layered structures

1988 • 86 citations

Electronic structure of the π-bonded chain model and the nonbuckled antiferromagnetic insulator model for the Si(111) surface

1982 • 85 citations

Total-energy calculations on the Takayanagi model for the Si(111) 7×7 surface

1986 • 84 citations

Energetics of GaAs island formation on Si(100)

1989 • 84 citations

New Model for Reconstructed Si(111) 7 × 7 Surface Superlattices

1980 • 84 citations

Calculations of low-energy electron diffraction intensities from the polar faces of ZnO

1975 • 84 citations

The geometric structures of the GaAs(111) and (110) surfaces

1984 • 84 citations

Structure and transformation characteristics of impurity stabilized phases on the Si(111) surface

1971 • 83 citations

Atomic structure of laser annealed Si(111)–(1×1)

1981 • 83 citations

Electronic structure of Ge(111) and Ge(111): H from angle-resolved-photoemission measurements

1982 • 83 citations

X-ray diffraction evidence of adatoms in the Si(111)7×7 reconstructed surface

1986 • 83 citations

The crystallography of the polar (0001) Zn and (0001̄)O surfaces of zinc oxide

1974 • 82 citations

Surface reconstruction and vibrational excitations of Si(001)

1987 • 82 citations

Gallium growth and reconstruction on the Si(100) surface

1990 • 82 citations

Surface stacking sequence and (7 × 7) reconstruction at Si(111) surfaces

1983 • 82 citations

Monte Carlo simulations of Si(001) growth and reconstruction during molecular beam epitaxy

1988 • 82 citations

Bonding of antimony on GaAs(110): A prototypical system for adsorption of column-V elements on III-V compounds

1983 • 81 citations

High-order reconstructions of the Ge(100) surface

1988 • 80 citations

Theory of the overlayer plasmon on the Si(001)2×1-K surface

1985 • 79 citations

Possibility of charge transfer between dimer atoms on Si(100)-(2×1)

1988 • 78 citations

Interaction of alkali metals with Si(001)-2×1

1991 • 78 citations

Rheed study on the Ge/Si(111) and Si/Ge(111) systems: Reaction of Ge with the Si(111)(7 × 7) surface

1984 • 78 citations

The structure of Si(OOl) 2 × 1 surface — Studied by low energy electron diffraction

1978 • 78 citations

Adsorbate registry and subsurface relaxation of the reconstructions

1987 • 78 citations

Electronic structure and atomic configuration at the cleavage surface of zincblende compounds

1977 • 77 citations

Subsurface strain in the Ge(001) and Ge(111) surfaces and comparison to silicon

1986 • 77 citations

Atomic and electronic structure of the Na/Si(001)-2×1surface

1989 • 76 citations

Atomic, electronic, and vibronic structure of semiconductor surfaces

1986 • 76 citations

An STM study of the gallium induced reconstruction of Si(111)

1988 • 76 citations

Anisotropic spread of surface dimer openings in the initial stages of the epitaxial growth of Si on Si{100}

1989 • 75 citations

The 2 × 1 structural reconstruction of Si{001}

1982 • 75 citations

Models of column III and V elements on GaAs (110): Application to MBE

1981 • 74 citations

Surface reconstructions of ZnO cleavage faces

1987 • 74 citations

Ordered-defect model for Si(001)-(2×8)

1986 • 74 citations

Schottky-barrier formation at low metal coverages: A consistent molecular-orbital calculation for K on GaAs(110)

1989 • 74 citations

Metallization of Silicon upon Potassium Adsorption

1987 • 74 citations

Evidence for subsurface atomic displacements of the GaAs(110) surface from LEED/CMTA analysis

1978 • 73 citations

Atomic Geometry of GaAs(110)-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi><mml:mo>(</mml:mo><mml:mn>1</mml:mn><mml:mn /><mml:mo>×</mml:mo><mml:mn>1</mml:mn><mml:mo>)</mml:mo></mml:math>-Al

1981 • 73 citations

Rational function representation for accurate exchange energy functionals

1987 • 73 citations

Low-energy-electron-diffraction analysis of the atomic geometry of ZnO (10¯10)

1977 • 73 citations

Relaxation of (111) silicon surface atoms from studies of Si4H9 clusters

1976 • 73 citations

Atomic geometry of the low‐index surfaces of ZnO: LEED analysis

1976 • 72 citations

Dimer-plus-chain structure for the SI(100)-c(4×2) surface

1985 • 72 citations

Surface properties of electronic materials

1988 • 72 citations

Missing spots in low-energy electron-diffraction patterns

1984 • 72 citations

Molecular-dynamics simulation of molecular-beam epitaxial growth of the silicon (100) surface

1987 • 72 citations

Theory of defect states in glassy selenium

1980 • 72 citations

Observation and structural determination of (√3×√3)R30° reconstruction of the Si(111) surface

1989 • 71 citations

Surface and bulk electronic structure of Ge(111)c(2×8) and Ge(111):As 1×1

1986 • 70 citations

Total energy minimization for surfaces of covalent semiconductors C, Si, Ge, and α-Sn

1988 • 70 citations

Structural model of Si(100)-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>c</mml:mi><mml:mo>(</mml:mo><mml:mn>4</mml:mn><mml:mn /><mml:mo>×</mml:mo><mml:mn>4</mml:mn><mml:mo>)</mml:mo></mml:math>

1987 • 69 citations

Electronic excitations in K monolayer adsorbed on Si(100) 2×1

1983 • 68 citations

Reconstruction of the (110) surface of III–V semiconductor compounds

1981 • 68 citations

Milk-stool model for Si(111) surface reconstruction

1979 • 68 citations

Buckling Reconstruction on Laser-Annealed Si(111) Surfaces

1981 • 67 citations

Auger spectra and LEED patterns from vacuum cleaved silicon crystals with calibrated deposits of iron

1971 • 67 citations

Sb Overlayers on (110) Surfaces of III-V Semiconductors: Structure and Bonding

1984 • 67 citations

Subsurface atomic displacements at the GaAs(110) surface

1978 • 66 citations

Atomic structure of Si(111) (√3¯×√3¯)R30°-B by dynamical low-energy electron diffraction

1990 • 66 citations

Structure of the K/Si(100)-(2×1) surface: Semiempirical self-consistent-field crystal orbital analysis

1989 • 66 citations

Dynamical analysis of low-energy-electron diffraction intensities from InP (110)

1980 • 65 citations

Relaxation in zinc oxide (10.lovin.10), (0001), and (000.lovin.1) surfaces and the adsorption of carbon monoxide

1986 • 65 citations

Relationship of Surface-State Band Structure to Surface Atomic Configuration of Zinc Blende (110)

1970 • 64 citations

Surface structure and orbital symmetries of (110) surface states of GaAs

1978 • 64 citations

A comparison of some important surface properties of elemental and tetrahedrally coordinated compound semiconductors

1975 • 64 citations

Experimental dangling-bond band on the Ge(111)-(2×1) surface

1983 • 64 citations

Photoemission and band-structure studies of the GaAs(110) surface

1977 • 63 citations

Surface electronic structure of GaAs(110)1×1-Sb studied with angle-resolved photoelectron spectroscopy

1986 • 63 citations

Correlation effects on the electronic structure of 1 × 1 and 2 × 1 reconstructed Si(111) surfaces

1981 • 63 citations

Electronic structure of Al chemisorbed on the Si (111) surface

1977 • 63 citations

Structure of the Al-GaAs(110) interface from an energy-minimization approach

1982 • 63 citations

Atomic and electronic structure of ZnS cleavage surfaces

1987 • 62 citations

Surface structure of Ge(100) studied by He diffraction

1987 • 62 citations

Ab initiotheory of polar semiconductor surfaces. II. (22) reconstructions and related phase transitions of GaAs(1¯1¯1¯)

1987 • 62 citations

Electronic and structural properties of a discommensurate monolayer system: GaAs(110)-(1×1)Bi

1989 • 62 citations

Surface structures of Si(100)-Al phases

1989 • 62 citations

New surface atomic structures for column V overlayers on the (110) surfaces of III–V compound semiconductors

1990 • 61 citations

Trends in surface atomic geometries of compound semiconductors

1980 • 60 citations

Theoretical studies of the reconstruction of the (110) surface of III–V and II–VI semiconductor compounds

1980 • 60 citations

Self-consistent pseudopotential calculations of the equilibrium properties of bulk and surface Si

1979 • 59 citations

Structural Energies of A1 Deposited on the GaAs(110) Surface

1981 • 59 citations

Reconstruction of the clean and metal-adsorbed Ge(111) surface

1989 • 59 citations

Studies of the Si(111) surface with various Al overlayers

1978 • 59 citations

RHEED studies of Si(100) surface structures induced by Ga evaporation

1981 • 59 citations

Probable atomic structure of reconstructed Si(001)2×1 surfaces determined by low-energy electron diffraction

1977 • 58 citations

Total energy minimization for diamond (111) surfaces: Support for an undimerized<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>π</mml:mi></mml:math>-bonded chain reconstruction

1984 • 58 citations

Electronic structure of the Ge(111)-c(2×8) surface

1988 • 58 citations

Silicon surface structures after pulsed laser annealing

1980 • 58 citations

Electronic properties of Na overlayers on the GaAs(110) surface

1989 • 57 citations

Dynamical analysis of low-energy-electron-diffraction intensities from InSb(110)

1980 • 57 citations

Atomic geometry of semiconductor surfaces

1978 • 56 citations

The (1 × 1) structure of Si(111): Strong correlations in surface state bands?

1981 • 56 citations

Local-density-functional total energy gradients in the linear combination of Gaussian-type orbitals method

1990 • 56 citations

Dimer-chain model for the 7×7 and the 2×8 reconstructed surfaces of reconstructed surfaces of Si(111) and Ge(111)

1986 • 56 citations

Interpretation of low energy electron diffraction data to predict surface atom arrangements

1964 • 56 citations

Electronic structure of the ideal and reconstructed Si(001) surface

1978 • 55 citations

Chemisorption site geometry and interface electronic structure of Ga and Al on GaAs(110)

1979 • 55 citations

Computer calculations of semiconductor surface structures

1968 • 54 citations

Structural studies of Si (111) 2 × 1 surfaces using low-energy electron diffraction

1986 • 54 citations

Structural and electronic properties of Bi/GaAs(110)

1989 • 53 citations

Theoretical support to the double-layer model for potassium adsorption on the Si(001) surface

1991 • 53 citations

Comparison between the Electronic Structures of GaAs(111) and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">GaAs</mml:mi><mml:mo>(</mml:mo><mml:mrow><mml:mrow><mml:mover><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mo>―</mml:mo></mml:mrow></mml:mover></mml:mrow></mml:mrow><mml:mi /><mml:mrow><mml:mrow><mml:mover><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mo>―</mml:mo></mml:mrow></mml:mover></mml:mrow></mml:mrow><mml:mi…

1984 • 53 citations

Structural chemistry of the cleavage faces of compound semiconductors

1983 • 53 citations

Unoccupied surface states of (1×1) Sb overlayers on GaAs(110) and InP(110)

1988 • 52 citations

First-principles theory of sulfur adsorption on semi-infinite Ge(001)

1990 • 52 citations

Determination and application of the atomic geometries of solid surfaces

1982 • 52 citations

Angle-resolved photoelectron spectroscopy investigation of intrinsic surface states on the Ge(001)-(2 × 1) reconstructed surface

1983 • 51 citations

Study of surfaces and interfaces using quantum chemistry techniques

1979 • 51 citations

Optical properties and atomic structure of cleaved silicon and germanium (111) surfaces

1986 • 51 citations

Atomic and electronic structure of semiconductor surfaces

1978 • 51 citations

Evolution of the Si(100)‐2×2‐In reconstruction

1991 • 50 citations

Determination of the surface geometry of gaAs(110) by the total energy and force methods

1987 • 50 citations

Exact-exchange Hartree-Fock calculations for periodic systems. V. Ground-state properties of silicon

1981 • 50 citations

Effect of Relaxation and Reconstruction on the Electronic-Energy-Level Structure of the Si(111) Surface

1975 • 50 citations

Growth and atomic geometry of bismuth and antimony on InP(110) studied using low-energy electron diffraction

1992 • 50 citations

RHEED intensity analysis of Si(001)2 × 1 and 2 × 1-K surface structures

1991 • 50 citations

Low-energy electron diffraction from Si(111)-2×1: theory and experiment

1979 • 49 citations

Confirmation of a Highly Dispersive Dangling-Bond Band on Ge(111)-2 × 1

1984 • 49 citations

Structural and electronic properties of the (111)2×1 surface of Ge from first-principles calculations

1991 • 48 citations

Surface phonons in GaAs(110)

1987 • 48 citations

Mott insulator model of the Si(111)–(2×1) surface

1982 • 48 citations

Electronic structure of the (111) surface of semiconductors

1975 • 48 citations

Atomic structure of Si(111) surfaces

1980 • 48 citations

Step-formation energies and domain orientations at Si(111) surfaces

1981 • 48 citations

Atomic structure of the (2×2) reconstructed GaAs(1¯1¯1¯) surface: A multivacancy model

1986 • 47 citations

Arsenic and gallium atom location on silicon (111)

1989 • 47 citations

Dynamics and structural assessment of open semiconductor surfaces: GaAs(110)

1990 • 47 citations

Surface structure and bonding of the cleavage faces of tetrahedrally coordinated II–VI compounds

1988 • 47 citations

Surface phonons and reconstruction of a silicon surface

1984 • 46 citations

Structural phase transitions of the Si(100) surface

1985 • 46 citations

Constant temperature molecular dynamics simulations of Si(100) and Ge(100): Equilibrium structure and short-time behavior

1992 • 46 citations

Si and Ge (111) surface structures after pulsed laser annealing

1980 • 46 citations

Atomic geometry of Al−GaAs interfaces: GaAs (110)–p(1 × 1)–Al(ϑ), 0?ϑ?8.5 monolayers

1981 • 45 citations

Chemical bonding, adatom-adatom interaction, and replacement reaction of column-3 metals on GaAs(110)

1983 • 45 citations

Chemisorption of Al and Ga on the GaAs (110) surface

1980 • 44 citations

Structure determination of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">Ge</mml:mi><mml:mn /><mml:mo>(</mml:mo><mml:mn>111</mml:mn><mml:mo>)</mml:mo><mml:mn /><mml:mo>−</mml:mo><mml:mi>c</mml:mi><mml:mo>(</mml:mo><mml:mn>2</mml:mn><mml:mn /><mml:mo>×</mml:mo><mml:mn>8</mml:mn><mml:mo>)</mml:mo></mml:math>surface by medium-energy ion scattering

1988 • 44 citations

Atomic Structure of the Si(111) 7×7 Surface

1977 • 44 citations

Theoretical study of the atomic and electronic structure of the c-4 × 4 reconstructed GaAs(100) surface

1982 • 44 citations

Total energy of the adatom and pyramidal-cluster models for Si(111)

1984 • 44 citations

Characterization of GaAs(111) surfaces by AES and LEED

1985 • 44 citations

The surface geometry of GaAs(110): A response

1985 • 44 citations

An ab initio investigation of the Takayanagi reconstruction

1987 • 44 citations

The crystallography of the principal non-polar (112̄0) and (101̄0) surfaces of zinc oxide

1974 • 43 citations

New adatom model for Si(111) 7×7 and Si(111)-Ge 5×5 reconstructed surfaces

1984 • 43 citations

Atomic scale calculations of structure in materials

1990 • 43 citations

Structure of Si(111)−7 × 7. II

1984 • 43 citations

The surface geometry of GaAs(110)

1985 • 42 citations

Electronic structure of Si(111) surfaces

1980 • 42 citations

Adsorption of As on stepped Si(100): Resolution of the sublattice-orientation dilemma

1991 • 42 citations

Contemporary pseudopotentials—Simple reliability criteria

1979 • 41 citations

Ge(111)2×1:<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>π</mml:mi></mml:math>-Bonded Chain Model or Not?

1984 • 41 citations

On the stability and structure of 5×5 and 7×7 reconstruction of the (111) surface of Si and Ge

1986 • 41 citations

SLAB-MINDO calculations on the Si(100) surface

1989 • 41 citations

LEED analysis and energy minimization calculations for Si(111) (7×7) surface structures

1979 • 41 citations

New evidence for asymmetric dimer reconstruction on the Si(100)-(2×1) surface

1982 • 41 citations

On Structural and Electronic Properties of Cleaved Silicon Surfaces

1974 • 41 citations

Ion neutralization studies of the (111), (1̄1̄1̄) and (110) surfaces of GaAs

1966 • 40 citations

Study of Electronic Structures of Ge(111)7 ×7-Sn and Ge(111) “2 ×8” Surfaces by Angle-Resolved UPS

1984 • 40 citations

(2×2) reconstructions of the {111} polar surfaces of GaAs

1986 • 40 citations

Stability of metallic dimers on the Si(001) surface

1989 • 39 citations

Atomic and electronic structures of (111), (211), and (311) surfaces of GaAs

1985 • 39 citations

Nature of bonding between alkali metals and silicon surface

1988 • 39 citations

Microscopic mechanisms of reactions associated with silicon MBE: A molecular dynamics investigation

1988 • 39 citations

Bismuth and antimony adsorption on III–V(110) substrates: Growth, order, and structure

1990 • 39 citations

Atomic geometries of ZnSe(110) and GaAs(110): Determination by photoemission spectroscopy

1984 • 38 citations

Atomic scale structure of interfaces

1990 • 38 citations

The Si (100) surface. II. A theoretical study of the relaxed surface

1975 • 38 citations

Electronic structure and collective excitations of alkali metal chain on Si(100)2×1 surface

1985 • 37 citations

Relaxation and reconstruction of Si and diamond (111) surfaces using X4H9 clusters

1979 • 37 citations

Atomic geometry of GaSb(110): Determination via elastic low-energy electron diffraction intensity analysis

1983 • 37 citations

First-principles investigation of geometric and electronic structures of aluminum adsorbed on silicon surfaces

1987 • 36 citations

Angular-resolved UV photoemission studies of ordered Sb overlayers on GaAs(110) and GaP(110)

1986 • 36 citations

Elastic stress domains on the Si(100) surface

1989 • 36 citations

Modelling of silicon surfaces: a comparative study

1990 • 36 citations

Surface electronic bands of GaAs(1 1 0)-Sb: An angular resolved photoemission study

1986 • 36 citations

Vacancy buckling model for the (111) surface of III–V compound semiconductors

1985 • 35 citations

Atomic geometry of the 2×2 GaP(111) surface

1985 • 35 citations

High temperature nitridation structures of the Si(111)-(7×7) surface

1987 • 35 citations

Si(100) surface states: A success for the (2 × 1) asymmetric dimer model

1982 • 34 citations

Photoemission and theoretical studies of GaAs(111) and (1¯ 1¯ 1¯) surfaces: Vacancy models

1985 • 34 citations

Theory of semiconductor surface reconstruction: Si(111)-7×7, Si(111)-2×1, and GaAs(110)

1983 • 34 citations

Observation of an intrinsic5×5reconstruction on the clean Si(111) surface

1989 • 34 citations

A scanning tunneling microscopy study of clean and Cs-covered InSb(110)

1991 • 34 citations

Antibonding surface state band of the Ge(111)2 × 1 surface

1989 • 34 citations

A structural study of the K adsorption site on a Si(001)2 × 1 surface: Dimer, caves or both

1989 • 33 citations

Interaction of alkali metals with semiconductors

1987 • 33 citations

First-principles determination of the structure of the Al/GaAs(110) surface

1982 • 32 citations

A new mechanism for the 2 × 1 reconstruction of the silicon 〈111〉 surface

1977 • 32 citations

The electronic structure of semiconductor surfaces

1984 • 32 citations

Chemisorption of oxygen and aluminum on the GaAs (110) surface from a b i n i t i o theory

1980 • 32 citations

Surface structure determination of the cleavage faces of CdSe via low-energy positron diffraction

1989 • 31 citations

The asymmetric dimer on Si(100): Correlation effects in cluster calculations

1983 • 31 citations

Microscopic model of heteroepitaxy of GaAs on Si(100)

1989 • 31 citations

Modified milk-stool on wurtzite layer model for Si(111) 7 × 7 surface reconstruction

1984 • 31 citations

Si(111) 2×1 surface reconstructions calculated by the density-functional method

1983 • 30 citations

Quasiparticle surface band structure and photoelectric threshold of Ge(111)-2×1

1991 • 30 citations

Dynamical strain at semiconductor interfaces: Structure and surface-atom vibrations of GaAs(110) and GaAs(110)–p(1×1)–Sb

1991 • 30 citations

Surface relaxation by the keating model: A comparison with ab-initio calculations aind x-ray diffraction experiments

1989 • 30 citations

New surface states on the annealed Ge(111) surface

1986 • 30 citations

Three-bond scission and the structure of the cleaved Si(111) surface

1988 • 29 citations

RHEED studies of Si(100) surface structures induced by Ga evaporation

1981 • 29 citations

Thermally reversible band bending for Bi/GaAs(110): Photoemission and inverse-photoemission investigations

1990 • 29 citations

Density matrix of crystalline systems. I. Long‐range behavior and related computational problems

1990 • 29 citations

Surface states at unrelaxed ZnO(101̄0)

1980 • 29 citations

The effect of a Ga prelayer on the beginning of GaAs epitaxy on Si

1988 • 29 citations

Reactivity, Electronic Structure and Geometry of Nonpolar Zincoxide Surfaces

1978 • 29 citations

The origin of Schottky barriers on the cleavage plane of III–V semiconductors: Review of some recent theoretical work

1983 • 29 citations

Chemisorption of group-III metals on the Si(111) and Ge(111) surfaces: Anab initiostudy

1990 • 28 citations

Theory of the electronic and atomic structure of Si(111): Surface spin-polarization effects

1982 • 28 citations

Structure of Si(001) surfaces. I. The origin of the buckling in the dimer formation on reconstructed surfaces

1991 • 28 citations

Study of high order reconstructions of the Si(100) surface

1983 • 27 citations

Electronic and atomic structure of cleavage faces of ZnSe

1987 • 27 citations

The MgO(110) surface and CO adsorption thereon. I. Clean (110) surface

1987 • 27 citations

Surface structure of ZnTe (110) as determined from dynamical analysis of low-energy-electron diffraction intensities

1980 • 27 citations

Electronic structure of Al chemisorbed on GaAs(110)

1979 • 27 citations

Bonding and surface electronic structure of an Sb overlayer on GaP(110)

1987 • 26 citations

Electronic structure of an ordered overlayer on a semiconductor: Bi/GaAs(110)

1989 • 26 citations

Relaxation of zinc-blende (110) surfaces

1989 • 26 citations

Evolution of empty-state bands for Bi/GaAs(110): From Bi zigzag chains to ordered overlayers

1989 • 26 citations

Semiconductor surface reconstruction

1983 • 26 citations

Surface atomic and electronic structure of ZnO polymorphs

1992 • 26 citations

Atomic and Electronic Structure of Surfaces: Theoretical Foundations

2014 • 26 citations

Surface band dispersion of Ge(111)c(2×8) and Ge(111):As 1×1

1986 • 26 citations

Steps on (001) silicon surfaces

1987 • 26 citations

Dynamical analysis of low-energy electron diffraction intensities from CdSe()

1988 • 26 citations

Atomic structure of reconstructed group IV and III–V semiconductor surfaces

1989 • 26 citations

Structure of IlI–V compound (110) surface regions from EPR data and elastic energy minimisation calculations

1979 • 25 citations

Electronic properties of semiconductor surfaces and interfaces: Selected results from green function studies

1985 • 25 citations

Experimental and theoretical investigation of chemisorbed Ga on Si(111)

1988 • 25 citations

Reconstruction of the (110) surfaces for III–V semiconductors; Five systems involving In or Sb

1984 • 25 citations

Low energy electron diffraction study of (221) and (311) GaAs surfaces

1985 • 25 citations

Effect of Reconstruction on the Electronic Free Energy of a Simple Model of Transition Metals

1973 • 24 citations

Charge transfer adsorption in silicon vapor-phase epitaxial growth

1988 • 24 citations

Cluster calculations of the Si(111) 7×7 dimer–adatom–stacking-fault structure

1989 • 24 citations

Comparison of the atomic geometries of GaSb(110) and ZnTe(110): Failure of ionicity-structure correlations

1983 • 24 citations

Electronic properties of laser-annealed (111)-(1 × 1) surfaces of highly doped silicon

1981 • 24 citations

Sb overlayers on (110) surfaces of III–V semiconductors: A new type of chemical bond

1985 • 24 citations

Low-energy electron diffraction study of vacuum-cleaved (110) cadmium telluride

1965 • 24 citations

Electronic states near the band gap for the GaAs(110) surface

1977 • 24 citations

SLAB-MINDO calculations on the Si(111)2 × 1 surface

1990 • 23 citations

Atomic and electronic structure of tetrahedrally coordinated compound semiconductor interfaces

1988 • 23 citations

Atomic structure of alkali metal overlayers on the Si(001) surface

1990 • 23 citations

LEED surface crystallography, R-factors and the structure of the (110) surfaces of III–V semiconductors

1986 • 23 citations

Prediction of direct band gaps in monolayer (001) and (111) GaAs/GaP superlattices

1990 • 23 citations

Structure of the laser annealed Si(1 1 1)-(1 × 1) surface

1985 • 23 citations

Comparative study of reconstructed silicon and diamond (111) surfaces modelled by small clusters

1981 • 22 citations

Evaluation of recent Si(111)-(7 × 7) surface models

1981 • 22 citations

Simulations of adatom geometries on the Si(111) surface using a model potential

1989 • 22 citations

Non-empirical pseudopotentials in the HF-LCAO approach to crystalline solids

1989 • 22 citations

Chemisorption of atomic aluminum on Si(111): Evidence for an adsorbate-induced relaxation based onab initiocluster-model calculations

1988 • 21 citations

Mechanism and consequences of surface reconstruction on the cleavage faces of wurtzite‐structure compound semiconductors

1988 • 21 citations

Critique of the empirical tight-binding method for semiconductor surfaces and interfaces

1979 • 21 citations

New results on the quenched "1×1" structure of Si{111} surfaces

1983 • 21 citations

Theoretical studies of reconstructed GaAs(100) surfaces using first principle calculations

1987 • 21 citations

Modified milk-stool on wurtzite layer model for Si(111) 7X7 surface reconstruction

1984 • 20 citations

Two-dimensional electronic structure of the GaAs(110)-Bi system

1991 • 20 citations

The periodic MINDO molecular orbital method as a surface analytical technique

1989 • 20 citations

Total energy minimization for surfaces of covalent semiconductors C, Si, Ge, and α-Sn

1988 • 20 citations

Electronic surface structure of a tetrahedrally coordinated binary compound

1975 • 20 citations

The atomic geometry of the InSb(110): A new LEED study

1987 • 19 citations

Antibonding surface state band of the Ge(111)2 x 1 surface

1989 • 19 citations

First surface electronic structure of a wurtzite-type semiconductor the polar and nonpolar surfaces of ZnO

1980 • 19 citations

Potassium-induced unrelaxation of the GaAs(110) surface

1991 • 19 citations

Theoretical studies of Si vapor-phase epitaxial growth by Iab initioP molecular-orbital calculations

1990 • 19 citations

Cluster study of the Si(111)2×1 reconstruction

1988 • 19 citations

Atomic and electronic structure of the (311) surfaces of GaAs

1986 • 19 citations

LEED analysis of Si(111)−(7 × 7) surface models

1980 • 19 citations

Surface reconstruction on Si(100) studied by the CNDO method

1989 • 19 citations

Structure of Si(001) surfaces. II. The electronic structure of the symmetric dimer in the ground state

1991 • 18 citations

Atomic and Electronic Structure of Surfaces. Theoretical Foundations.

1993 • 18 citations

The effect of external stress on Si surfaces

1990 • 17 citations

A LEED study of CdTe(110): the conclusion of an optimised search

1988 • 17 citations

X-ray diffraction study of the Ge(111)5×5-Sn and Ge(111)7×7-Sn surfaces

1988 • 17 citations

Relaxation of the non-polar () surfaces of wurtzite AℓN and ZnS

1987 • 17 citations

Atomic structure of the CdS(112¯0) surface: A dynamical analysis of low-energy electron-diffraction intensities

1991 • 17 citations

Initial stage of formation of a metal-semiconductor interface: Al on GaAs(110)

1981 • 17 citations

Relaxation and surface states on wurtzite cleavage faces:<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">CdSe</mml:mi><mml:mo>(</mml:mo><mml:mn>10</mml:mn><mml:mn /><mml:mrow><mml:mrow><mml:mover><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mi>¯</mml:mi></mml:mrow></mml:mover></mml:mrow></mml:mrow><mml:mn>0</mml:mn><mml:mo>)</mml:mo></mml:math>

1987 • 15 citations

GaAs(110) -Al INTERFACES FORMED AT LOW TEMPERATURE

1984 • 15 citations

Effects of the 2 × 1 reconstruction on the electronic structure of the (111) surface of Si and Ge

1975 • 15 citations

Atomic structure of polar (111) surfaces of GaAs and ZnSe

1986 • 15 citations

Thermal conversion of Si(111)2 × 1 cleaved surface structure to Si(111)7 × 7 structure

1989 • 15 citations

Growth mechanisms of Si and Ge epitaxial films on the dimer reconstructed Si{100} surface via molecular dynamics

1990 • 14 citations

Surface atomic geometry and electronic structure of II–VI cleavage faces

1989 • 14 citations

Comparison of semiempirical calculations for silicon compounds

1991 • 14 citations

Semiempirical Construction of LCAO Parameters for II–VI Compound Semiconductors

1989 • 14 citations

Electronic structure of the Si (111) reconstructed surface in the vacancy model

1982 • 14 citations

Theoretical studies of the electronic structure of semiconductor surfaces

1977 • 13 citations

Reconstruction of the (110) surfaces for III–V semiconductors; five systems involving In or Sb

1984 • 13 citations

About the existence of an antiferromagnetic ground state for the (1× 1) structure of Si(111)

1982 • 13 citations

The atomic geometry of the ZnSe (110) surface: determination by total-energy methods

1986 • 13 citations

Electronic states and electron-phonon coupling at the 2×1 reconstructed Si(111) surface

1981 • 13 citations

New results in low temperature studies of semiconductor surfaces

1988 • 13 citations

Dependence on ionicity of the (110) surface relaxations of zinc-blende semiconductors

1987 • 12 citations

Silicon (2p) surface core-level line shape of Si(111)–B

1991 • 12 citations

Model of epitaxial growth of GaAs on Si(100): Nucleation at surface steps

1989 • 12 citations

Low-energy electron diffraction intensity analysis of the atomic geometry of p(1×1) monolayers of bismuth on GaAs(110)

1990 • 12 citations

Theory on spectroscopy and work function of alkali chains adsorbed on Si(001)2×1

1985 • 11 citations

Electronic states of the (100) (2×1) reconstructed Ge surface

1984 • 11 citations

Commensurate and incommensurate phases on Si(001) and Ge(001) surfaces

1989 • 11 citations

Density matrix of crystalline systems. II. The influence of structural and computational parameters

1990 • 11 citations

Minimal tight-binding Hamiltonian for semiconductors

1988 • 10 citations

Twisting of dimers on the Si(100) surface

1985 • 10 citations

Efficient techniques for computer simulations of heteroepitaxial growth

1990 • 9 citations

Surface related core level shifts for the Si(111)√3×√3: Al system

1991 • 9 citations

Investigations of Electronic States of Semiconductor Surface and Interface by the Charge Self-Consistent Extended Hückel Method

1982 • 8 citations

Si(111)‐(7×7)表面のモデルのLEED解析

1980 • 8 citations

Bonding of column 3 and 5 atoms on GaAs (110)

1981 • 8 citations

Pseudopotential surface and interface calculations

1979 • 8 citations

Lateral compressive stress and reconstruction of semiconductor (111) surfaces

1985 • 8 citations

Adsorption geometry and overlayer morphology in the formation of interfaces between metals and (110) III–V surfaces

1990 • 7 citations

Semiconductor surface relaxation and reconstruction evaluated using the pseudofunction method

1989 • 7 citations

Reconstructions of the Ge(0 0 1) surface

1989 • 7 citations

Electronic structure of the (111) ideal and relaxed surface of silicon by the chemical pseudopotential method

1979 • 6 citations

Structure of cleavage steps on Si(111)

1990 • 6 citations

Local density of states for the overlayer of Al chemisorbed on the Si (111) surface

1979 • 5 citations

Surface dynamics and reconstruction of Si and Ge

1985 • 5 citations

Summary Abstract: The (1×1) structure of Si(111) and C(111): Strong correlations in surface-state bands?

1982 • 4 citations

Electronic properties of the reconstructed Si(111) 7×7 surface

1983 • 4 citations

Surface relaxation of zinc blende (110)

1978 • 3 citations

Hartree-Fockab initioapproaches to the solution of some solid-state problems: state of the art and prospects

1987 • 3 citations

Long-period reconstruction of Si(111) and Ge(111)-Sn surfaces: an underlying mechanism for the 7×7 structure

1984 • 3 citations

A new energy model for the calculation of the surface reconstruction of III?V semiconductors: Application to the GaAs (110) surface

1987 • 3 citations

Summary Abstract: Atomic geometry and electronic structure of the (311)-(1×1) surfaces of GaAs

1986 • 3 citations

Alkali metal chains on the GaAs(110) surface

1991 • 2 citations

Summary Abstract: Mott insulator model of the Si(111)-(2×1) surface

1982 • 2 citations

Ion beam crystallography of the Si(111)-(7×7) and (1×1) surfaces

1983 • 2 citations

Bulk interpretation of the angle-resolved photoemission spectra from GaAs(110)

1979 • 2 citations

A mechanism of 7 × 7 reconstruction on Si(111) and Ge(111)Sn surfaces

1985 • 2 citations

The polarization dependence of Bi‐induced surface states on GaAs(110)

1991 • 2 citations

Dimerization and adsorption of Si on the Si(100) surface

1991 • 1 citations

Theoretical study of the As(100) surface reconstruction of GaAs

1983 • 1 citations