Photoelectron spectroscopy of surface states on semiconductor surfaces

Numerical data and functional relationships in science and technology

1969 • 5,986 citations

Electronic structure and the properties of solids

1980 • 4,228 citations

Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors

1976 • 1,977 citations

7 × 7 Reconstruction on Si(111) Resolved in Real Space

1983 • 1,838 citations

Structural analysis of Si(111)-7×7 by UHV-transmission electron diffraction and microscopy

1985 • 1,302 citations

On the Surface States Associated with a Periodic Potential

1939 • 1,192 citations

Molecular beam epitaxy

1975 • 1,191 citations

Surface Electronic Structure of Si (111)-(7×7) Resolved in Real Space

1986 • 1,111 citations

Structure analysis of Si(111)-7 × 7 reconstructed surface by transmission electron diffraction

1985 • 1,089 citations

Atomic and Electronic Structures of Reconstructed Si(100) Surfaces

1979 • 1,049 citations

The structure and properties of metal-semiconductor interfaces

1982 • 908 citations

Photoemission in Solids I

1978 • 875 citations

Structure and Adsorption Characteristics of Clean Surfaces of Germanium and Silicon

1959 • 873 citations

Scanning tunneling microscopy of Si(001)

1986 • 846 citations

New<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>π</mml:mi></mml:math>-Bonded Chain Model for Si(111)-(2×1) Surface

1981 • 845 citations

Si(001) Dimer Structure Observed with Scanning Tunneling Microscopy

1985 • 650 citations

Physics of semiconductors

1965 • 465 citations

Work Function, Photoelectric Threshold, and Surface States of Atomically Clean Silicon

1962 • 458 citations

Angle-resolved measurements of the photoemission of electrons in the study of solids

1983 • 458 citations

Self-consistent pseudopotential calculations for Si (111) surfaces: Unreconstructed (1×1) and reconstructed (2×1) model structures

1975 • 442 citations

Photoemission Studies of Copper and Silver: Experiment

1964 • 405 citations

Structural and electronic model of negative electron affinity on the Si/Cs/O surface

1973 • 391 citations

Molecular Beam Epitaxy and Heterostructures

1985 • 380 citations

Energy-Minimization Approach to the Atomic Geometry of Semiconductor Surfaces

1978 • 376 citations

Determination of the Fermi-level pinning position at Si(111) surfaces

1983 • 366 citations

Angle-resolved photoemission, valence-band dispersions<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>E</mml:mi><mml:mo>(</mml:mo><mml:mrow><mml:mrow><mml:mover><mml:mrow><mml:mi mathvariant="normal">k</mml:mi></mml:mrow><mml:mrow><mml:mo>→</mml:mo></mml:mrow></mml:mover></mml:mrow></mml:mrow><mml:mo>)</mml:mo></mml:math>, and electron and hole lifetimes for GaAs

1980 • 346 citations

Origin of surface states on Si(111)(7×7)

1986 • 342 citations

(110) surface atomic structures of covalent and ionic semiconductors

1979 • 330 citations

Surface reconstruction on semiconductors

1976 • 320 citations

Optical Absorption of Surface States in Ultrahigh Vacuum Cleaved (111) Surfaces of Ge and Si

1971 • 310 citations

Theory of polar semiconductor surfaces

1979 • 291 citations

Low-Energy Electron Diffraction Study of Silicon Surface Structures

1962 • 278 citations

Structural Properties of Cleaved Silicon and Germanium Surfaces

1963 • 278 citations

Hydrogen adsorption and surface structures of silicon

1974 • 273 citations

Reconstruction Mechanism and Surface-State Dispersion for Si(111)-(2×1)

1982 • 269 citations

Tunneling microscopy of Ge(001)

1987 • 266 citations

Photoemission studies of intrinsic surface states on Si(100)

1979 • 262 citations

Theory of reconstruction induced subsurface strain — application to Si(100)

1978 • 257 citations

Photoemission Densities of Intrinsic Surface States for Si, Ge, and GaAs

1972 • 256 citations

Semiconductor surface structures

1983 • 256 citations

Differential Reflectivity of Si(111)2×1 Surface with Polarized Light: A Test for Surface Structure

1984 • 249 citations

Observation of a Band of Silicon Surface States Containing One Electron Per Surface Atom

1972 • 246 citations

Fundamentals of Semiconductor Devices

1966 • 240 citations

Surfaces of silicon

1987 • 237 citations

Work function, electron affinity and band bending of zinc oxide surfaces

1984 • 232 citations

Si(100) surfaces: Atomic and electronic structures

1979 • 231 citations

Electronic surface properties of Ga and In containing III–V compounds

1977 • 231 citations

Sb overlayers on (110) surfaces of III-V semiconductors: Total-energy minimization and surface electronic structure

1985 • 229 citations

Experimental Evidence for One Highly Dispersive Dangling-Bond Band on Si(111) 2 × 1

1982 • 226 citations

Symmetric arsenic dimers on the Si(100) surface

1986 • 224 citations

Photoemission and the Electronic Properties of Surfaces

1979 • 223 citations

Ab initiotheory of polar semiconductor surfaces. I. Methodology and the (22) reconstructions of GaAs(111)

1987 • 221 citations

Surface and Bulk Contributions to Ultraviolet Photoemission Spectra of Silicon

1974 • 217 citations

Surface states on Si(111)-(2×1)

1981 • 213 citations

Observations of “Clean” Surfaces of Si, Ge, and GaAs by Low-Energy Electron Diffraction

1965 • 213 citations

Vacancy-Buckling Model for the (2×2) GaAs(111) Surface

1984 • 210 citations

(2 × 1) reconstructed Si(001) surface: Self-consistent calculations of dimer models

1980 • 201 citations

<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">GaAs</mml:mi><mml:mn /><mml:mo>(</mml:mo><mml:mn>001</mml:mn><mml:mo>)</mml:mo><mml:mn /><mml:mo>−</mml:mo><mml:mi>c</mml:mi><mml:mo>(</mml:mo><mml:mn>4</mml:mn><mml:mn /><mml:mo>×</mml:mo><mml:mn>4</mml:mn><mml:mo>)</mml:mo></mml:math>: A chemisorbed structure

1983 • 199 citations

The Si (100) surface. III. Surface reconstruction

1976 • 198 citations

Atomic and electronic contributions to Si(111)-(7×7) scanning-tunneling-microscopy images

1986 • 196 citations

Si(111)-7×7 surface: Energy-minimization calculation for the dimer–adatom–stacking-fault model

1987 • 191 citations

Photoemission study of the surface and bulk electronic structures of Si(111)7×7 and Si(111)≤3¯×≤3¯:Al

1985 • 186 citations

An electron diffraction study of the structure of silicon (100)

1978 • 186 citations

Possible structures for clean, annealed surfaces of germanium and silicon

1964 • 182 citations

Surface states and reconstruction on Ge(001)

1985 • 178 citations

Self-consistent pseudopotential calculation for the relaxed (110) surface of GaAs

1979 • 175 citations

Photoemission Partial Yield Measurements of Unoccupied Intrinsic Surface States for Ge(111) and GaAs(110)

1974 • 173 citations

Electronic surface properties of III–V semiconductors: Excitonic effects, band-bending effects, and interactions with Au and O adsorbate layers

1976 • 172 citations

Geometrical and electronic structure of Si(001) and Si(111) surfaces: A status report

1980 • 171 citations

Work function variations of gallium arsenide cleaved single crystals

1975 • 169 citations

Surface electronic structure of GaAs(001)-(2×4): Angle-resolved photoemission and tight-binding calculations

1982 • 169 citations

Diffraction of He at the reconstructed Si(100) surface

1980 • 168 citations

Direct Measurement of the Polarization Dependence of Si(111)2×1 Surface-State Absorption by Use of Photothermal Displacement Spectroscopy

1984 • 160 citations

Angle-resolved photoemission from GaAs (110) surface states

1978 • 158 citations

Temperature-Dependent Surface States and Transitions of Si(111)-7×7

1983 • 155 citations

Ab initiomolecular dynamics on the Ge(100) surface

1987 • 155 citations

Angle-resolved photoemission from polar and nonpolar zinc oxide surfaces

1982 • 153 citations

Experimental studies of the dangling- and dimer-bond-related surface electron bands on Si(100) (2×1)

1981 • 152 citations

Electronic structure of the annealed Ge(111) and Si(111) surfaces: Similarities in local bonding

1981 • 149 citations

Vacancy-Induced 2×2 Reconstruction of the Ga(111) Surface of GaAs

1984 • 148 citations

Surface bands for single-domain 2 × 1 reconstructed Si(100) and Si(100):As. Photoemission results for off-axis crystals

1986 • 147 citations

Angle-resolved photoemission studies of Ge(111)-c(2×8), Ge(111)-(1×1)H, Si(111)-(7×7), and Si(100)-(2×1)

1985 • 146 citations

Spin Polarization and Atomic Geometry of the Si(111) Surface

1981 • 145 citations

Influence of volume dope on Fermi level position at gallium arsenide surfaces

1967 • 144 citations

Photoemission and energy loss spectroscopy on semiconductor surfaces

1975 • 140 citations

Electronic surface properties of uhv-cleaved III–V compounds

1977 • 139 citations

Calculation of the atomic geometries of the (110) surfaces of III–V compound semiconductors

1985 • 139 citations

Atomic Displacements in the Si(111)-(7×7) Surface

1980 • 136 citations

Reconstructions of GaAs and AlAs surfaces as a function of metal to As ratio

1981 • 135 citations

Diffraction of He Atoms at a Si(100) Surface

1978 • 135 citations

Surface state band on GaAs (110) face

1974 • 133 citations

Angle-resolved uv photoemission and electronic band structures of the lead chalcogenides

1978 • 131 citations

Electronic structure of ideal and relaxed surfaces of ZnO: A prototype ionic wurtzite semiconductor and its surface properties

1981 • 130 citations

Excitonic instabilities, vacancies, and reconstruction of covalent surfaces

1973 • 128 citations

Atomic geometry and surface-state spectrum for Ge(111)-(2×1)

1983 • 122 citations

Structure and reactivity of GaAs surfaces

1981 • 121 citations

First-Principles Electronic Structure Theory for Semi-infinite Semiconductors with Applications to Ge(001) (2×1) and Si(001) (2×1)

1986 • 115 citations

Surface electronic structure of Si(111)7×7-Ge and Si(111)5×5-Ge studied with photoemission and inverse photoemission

1987 • 111 citations

Metal-Insulator Transition on the Ge(001) Surface

1984 • 111 citations

Formation of surface superstructures by heat treatments on Ni-contaminated surface of Si(110)

1985 • 110 citations

Comparison of the Photoelectric Properties of Cleaved, Heated, and Sputtered Silicon Surfaces

1964 • 110 citations

Phase transitions on clean Si(110) surfaces

1977 • 109 citations

Angle-resolved photoemission studies of GaAs(100) surfaces grown by molecular-beam epitaxy

1983 • 103 citations

Surface phases of GaAs(100) and AlAs(100)

1981 • 102 citations

Picosecond Time-Resolved Photoemission Study of the InP(110) Surface

1985 • 100 citations

Measurement of the Angle of Dangling-Bond Photoemission from Cleaved Silicon

1974 • 100 citations

Si(100) Surface Reconstruction: Spectroscopic Selection of a Structural Model

1975 • 99 citations

On the structure of the laser irradiated Si(111)-(1 × 1) surface

1982 • 99 citations

Surface Reconstruction on a Clean Si(110) Surface Observed by RHEED

1986 • 99 citations

Many-body calculation of surface states: As on Ge(111)

1987 • 99 citations

Photoelectric properties and work function of cleaved germanium surfaces

1964 • 94 citations

The ideal (111), (110) and (100) surfaces of Si, Ge and GaAs; A comparison of their electronic structure

1980 • 94 citations

Photoemission study of the surface states that pin the Fermi level at Si(100)2 × 1 surfaces

1986 • 93 citations

Ultraviolet photoemission studies of chemisorption and point defect formation on ZnO nonpolar surfaces

1980 • 91 citations

Semiconductor surfaces

1982 • 90 citations

Theoretical study of the electronic structure of GaP(110)

1981 • 88 citations

New<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>c</mml:mi><mml:mo>−</mml:mo><mml:mn>2</mml:mn><mml:mo>×</mml:mo><mml:mn>8</mml:mn></mml:math>unit cell for the Ge(111) surface

1981 • 88 citations

Some observations on Ge:GaAs(001) and GaAs:Ge(001) interfaces and films

1983 • 88 citations

Atomic layer epitaxy and characterization of CdTe films grown on CdTe (110) substrates

1983 • 87 citations

π-bonded molecular and chain models for the Si(111) surface

1982 • 87 citations

Symmetry determination of surface states on GaAs (110) using polarization-dependent, angle-resolved photoemission

1978 • 86 citations

Low-Energy Electron Diffraction Determination of the Atomic Arrangement on Impurity-Stabilized Unreconstructed Si{111} Surfaces

1976 • 86 citations

Electronic structure of Ge(111) and Ge(111): H from angle-resolved-photoemission measurements

1982 • 83 citations

X-ray diffraction evidence of adatoms in the Si(111)7×7 reconstructed surface

1986 • 83 citations

Studies of clean and adatom treated surfaces of II–VI compounds

1982 • 83 citations

Atomic structure of laser annealed Si(111)–(1×1)

1981 • 83 citations

LEED investigation of germanium surfaces cleaned by sublimation of sulphide films; structural transitions on clean Ge(110) surface

1977 • 82 citations

Photoemission study of the antibonding surface-state band on Si(111)2×1

1985 • 81 citations

Surface states in Si(111)2×1 and Ge(111)2×1 by optical reflectivity

1980 • 80 citations

Electronic properties of clean cleaved {110} GaAs surfaces

1971 • 79 citations

Stacking-fault model for the Si(111)-(7×7) surface

1983 • 79 citations

Fundamentals of Semiconductor Devices

2012 • 78 citations

Photoelectron spectroscopy of solids and their surfaces

1980 • 78 citations

Electronic structure and atomic configuration at the cleavage surface of zincblende compounds

1977 • 77 citations

Atomic, electronic, and vibronic structure of semiconductor surfaces

1986 • 76 citations

Evidence for a 2D-metallic state of the clean 7 × 7 Si(111) surface

1981 • 75 citations

Investigation of Intrinsic Unoccupied Surface States at GaAs(110) by Isochromat Spectroscopy

1981 • 74 citations

Determination of Surface States at Clean, Cleaved Silicon Surfaces from Photoconductivity

1971 • 73 citations

Angle-resolved photoemission studies of surface states on (110) GaAs

1976 • 72 citations

Missing spots in low-energy electron-diffraction patterns

1984 • 72 citations

Surface and bulk electronic structure of Ge(111)c(2×8) and Ge(111):As 1×1

1986 • 70 citations

On the structure of reconstructed Si(001)2×1 and Ge(001)2×1 surfaces

1979 • 70 citations

Angle-resolved ultraviolet photoemission study of Si(111) 7 × 7 and 1 × 1 surfaces

1981 • 69 citations

The relaxed GaAs(110) surface: Are bond-lengths conserved?

1985 • 69 citations

Angle-resolved photoemission studies of Ge(001)-(2×1)

1984 • 69 citations

Picosecond Surface Electron Dynamics on Photoexcited Si(111) (2×1) Surfaces

1986 • 69 citations

The Si(2 × 1) surface: A theory of its spectroscopy

1975 • 68 citations

Scattering-theoretical method for relaxed and reconstructed surfaces with applications to GaAs(110) and Si(100)-(2×1)

1983 • 68 citations

Nonlocal pseudopotential calculation of the electronic properties of relaxed GaAs (110) surface

1980 • 68 citations

Buckling Reconstruction on Laser-Annealed Si(111) Surfaces

1981 • 67 citations

Experimental band structure of cadmium sulfide

1983 • 67 citations

Similarity of the laser- and thermally annealed Si(111) surfaces

1981 • 66 citations

Angular resolved photoemission of InSb(001) and heteroepitaxial films of α-Sn(001)

1983 • 65 citations

Experimental dangling-bond band on the Ge(111)-(2×1) surface

1983 • 64 citations

Angle-resolved photoemission from As-stable GaAs (001) surfaces prepared by MBE

1981 • 63 citations

Surface electronic structure of GaAs(110)1×1-Sb studied with angle-resolved photoelectron spectroscopy

1986 • 63 citations

Correlation effects on the electronic structure of 1 × 1 and 2 × 1 reconstructed Si(111) surfaces

1981 • 63 citations

Similarity between the Si(111)-(7×7) and impurity-stabilized Si(111)-(1×1) surfaces

1980 • 63 citations

Angular resolved ups of surface states on GaAs(1̄1̄1̄) prepared by molecular beam epitaxy

1979 • 63 citations

Surface structure of Ge(100) studied by He diffraction

1987 • 62 citations

Ab initiotheory of polar semiconductor surfaces. II. (22) reconstructions and related phase transitions of GaAs(1¯1¯1¯)

1987 • 62 citations

Photoemission measurement of surface states for annealed silicon

1974 • 61 citations

Angular Dependence of Photoemission from the (110) Face of GaAs

1973 • 60 citations

Electronic states of Si(111) surfaces

1981 • 59 citations

Probable atomic structure of reconstructed Si(001)2×1 surfaces determined by low-energy electron diffraction

1977 • 58 citations

Electronic structure of the Ge(111)-c(2×8) surface

1988 • 58 citations

Dynamical analysis of low-energy-electron-diffraction intensities from InSb(110)

1980 • 57 citations

Direct Photoemission Study of the Antibonding Surface-State Band on Ge(111)2×1

1985 • 57 citations

Bound and resonant (110) surface electronic states for GaAs, GaP and GaSb

1983 • 56 citations

Electronic Properties of Surfaces

1984 • 56 citations

Electronic structure of the ideal and reconstructed Si(001) surface

1978 • 55 citations

Angle-resolved photoemission and valence band dispersions for GaAs: Direct vs indirect models

1979 • 55 citations

Valence Band Structure of PbS from Angle-Resolved Photoemission

1977 • 55 citations

Computer calculations of semiconductor surface structures

1968 • 54 citations

Comparison between the Electronic Structures of GaAs(111) and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">GaAs</mml:mi><mml:mo>(</mml:mo><mml:mrow><mml:mrow><mml:mover><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mo>―</mml:mo></mml:mrow></mml:mover></mml:mrow></mml:mrow><mml:mi /><mml:mrow><mml:mrow><mml:mover><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mo>―</mml:mo></mml:mrow></mml:mover></mml:mrow></mml:mrow><mml:mi…

1984 • 53 citations

An investigation of thin silver films on cleaved silicon surfaces

1979 • 53 citations

The electronic structure of cleaved indium phosphide (110) surfaces: experiment and theory

1983 • 53 citations

Experimental energy-band dispersions, critical points, and spin-orbit splittings for GaSb using angle-resolved photoemission

1980 • 52 citations

Optical properties and atomic structure of cleaved silicon and germanium (111) surfaces

1986 • 51 citations

Angle-resolved photoelectron spectroscopy investigation of intrinsic surface states on the Ge(001)-(2 × 1) reconstructed surface

1983 • 51 citations

Angle-resolved photoemission from Si(100): Identification of bulk band transitions

1985 • 50 citations

A missing-row dimer model of InP(100) (4×2) reconstruction as proposed by LEED, UPS and HREELS studies

1987 • 50 citations

Angle-resolved photoemission from Si(100): Direct versus indirect transitions

1986 • 49 citations

Confirmation of a Highly Dispersive Dangling-Bond Band on Ge(111)-2 × 1

1984 • 49 citations

Si(111)2 × 1 studies by angle resolved photoemission

1983 • 48 citations

Angular distribution of photoelectrons from (111) silicon surface states

1975 • 48 citations

Mott insulator model of the Si(111)–(2×1) surface

1982 • 48 citations

Time- and angle-resolved photoemission study of InP(110)

1985 • 48 citations

Three independent LEED studies of clean Si (100) surfaces

1977 • 48 citations

Surface states and surface resonances in InP, InAs, and InSb

1982 • 48 citations

Photoemission yield spectroscopy of electronic surface states on germanium (111) surfaces

1979 • 47 citations

The delocalized d-electrons in the semimagnetic alloy Cd1−xMnxTe

1982 • 46 citations

Bulk and surface electronic structures of Si(111)2×1 and Si(111)7×7 studied by angle-resolved photoelectron spectroscopy

1985 • 46 citations

Surface states on GaAs(110)

1986 • 45 citations

Angle-resolved and -integrated photoemission from a ZnSe (110) surface

1981 • 45 citations

(110) surface states of GaAs and matrix element effects in angle-resolved photoemission

1978 • 45 citations

Investigation of surface states on the polar (111) and () faces of GaAs by photoelectron spectroscopy

1973 • 44 citations

Surface electronic structure studies of GaAs (110)

1978 • 44 citations

The surface geometry of GaAs(110): A response

1985 • 44 citations

Angle resolved photoemission valence band dispersions E(k) for gaP.

1984 • 43 citations

Electronic surface states of II–VI compound semiconductors

1982 • 43 citations

Electronic structure of Si(111) surfaces

1980 • 42 citations

Ge(111)2×1:<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>π</mml:mi></mml:math>-Bonded Chain Model or Not?

1984 • 41 citations

Electronic structure of the hydrogen chemisorbed Si(100)2×1-H surface: An angle resolved photoemission study

1987 • 41 citations

New evidence for asymmetric dimer reconstruction on the Si(100)-(2×1) surface

1982 • 41 citations

Electronic properties of the InP(100) surface

1986 • 41 citations

Study of Electronic Structures of Ge(111)7 ×7-Sn and Ge(111) “2 ×8” Surfaces by Angle-Resolved UPS

1984 • 40 citations

Polarization dependence of Ge(111)2×1 surface-state absorption using photothermal displacement spectroscopy: A test of surface reconstruction models

1984 • 40 citations

Structural studies of the adsorption of Cs and O2 on Si(100)

1974 • 39 citations

Evidence for an intrinsic intergap surface state on GaSb(110) by high-resolution angle-resolved photoemission

1987 • 39 citations

Application of high energy ion channeling to GaAs(110), Au-GaAs(110) and Pd-GaAs(110)

1984 • 38 citations

Atomic geometries of ZnSe(110) and GaAs(110): Determination by photoemission spectroscopy

1984 • 38 citations

Electronic structure of Si(111) surfaces

1983 • 38 citations

Resonant photoemission from surface states in GaP

1983 • 37 citations

Angle-resolved photoemission of the Si(111) 7 × 7 surface

1980 • 36 citations

Angle resolved photoelectron spectroscopy-the cleaved (110) surface of indium phosphide

1980 • 36 citations

New interpretation of the angular-resolved photoemission measurements from cleaved silicon

1976 • 36 citations

Si(100) surface states: A success for the (2 × 1) asymmetric dimer model

1982 • 34 citations

Renormalization scheme for the transfer-matrix method and the surfaces of wurtzite ZnO

1981 • 34 citations

Photoemission and theoretical studies of GaAs(111) and (1¯ 1¯ 1¯) surfaces: Vacancy models

1985 • 34 citations

Theory of semiconductor surface reconstruction: Si(111)-7×7, Si(111)-2×1, and GaAs(110)

1983 • 34 citations

RHEED Study of Surface Reconstruction at Clean Ge(110) Surface

1985 • 34 citations

Photoemission measurements of surface states for cleaved and annealed Ge(111) surfaces

1975 • 32 citations

UPS and LEED studies of GaAs (110) and (111) As surfaces

1978 • 32 citations

Adsorbate-induced umklapp processes in photoemission from Cl on Cu

1983 • 32 citations

Surface states and reactivity of H chemisorption on thermally cleaned Si(111) surfaces: New evidence for rough-surface models

1981 • 32 citations

The electronic structure of semiconductor surfaces

1984 • 32 citations

Photoemission study of the surface electronic structure of Si(111) 1 × 1 and Si(111) 7 × 7

1982 • 31 citations

Electronic structure of the Si(111) 7×7 surface studied by angle-resolved photoelectron spectroscopy

1979 • 30 citations

New surface states on the annealed Ge(111) surface

1986 • 30 citations

Surface states at unrelaxed ZnO(101̄0)

1980 • 29 citations

Electronic structure of semiconductor surfaces

1985 • 29 citations

Photoemission measurements of bulk, surface and hydrogen induced states on cleaved Ge(111)

1975 • 29 citations

Photoemission from Nearly Free Electron Metals

1987 • 28 citations

Well-Known "Surface State" on Si(111)2×1 Identified as a Bulk Contribution

1984 • 28 citations

Angular resolved photoemission from surface states on reconstructed (100) GaAs surfaces

1979 • 28 citations

Adsorption of bismuth on Si(110) surfaces

1981 • 27 citations

Photoemission studies of surface states on Si(111)2 × 1

1983 • 27 citations

Surface states on phosphorus- and gallium-rich GaP(1̄1̄1̄)P surfaces in electron energy-loss spectroscopy and photoemission

1975 • 27 citations

Surface structure of ZnTe (110) as determined from dynamical analysis of low-energy-electron diffraction intensities

1980 • 27 citations

Angle-resolved ultraviolet photoemission spectroscopy of the Si(001) surface

1980 • 27 citations

Chemisorption of atomic hydrogen on the silicon (110) 5 x 1 surface (UPS and LEED)

1976 • 27 citations

Surface band dispersion of Ge(111)c(2×8) and Ge(111):As 1×1

1986 • 26 citations

Angle-resolved photo-emission from the cleaved (110) surface of cadmium telluride

1986 • 26 citations

Surface band structure of MBE-grown GaAs(001)-2 × 4

1982 • 26 citations

Electronic properties of laser-annealed (111)-(1 × 1) surfaces of highly doped silicon

1981 • 24 citations

Similarity of Si(110)5×1 and Si(111)2×1 surfaces

1985 • 24 citations

Epitaxial growth and electronic structure of CdTe films

1984 • 23 citations

Surface bands in relaxed cleavance surface of GaP

1978 • 23 citations

Electronic structure of ideal and relaxed InSb(110) surfaces

1981 • 23 citations

Angle‐resolved photoemission spectroscopy of Hg1−xCdxTe

1985 • 22 citations

Angle-resolved photoemission of α-Sn(111) and the polar (111) and () surfaces of InSb

1985 • 22 citations

Direct observation of GaP(110) surface states

1985 • 22 citations

The electronic structure of wurtzite CdS studied using angle-resolved U.V. photoelectron spectroscopy

1985 • 21 citations

Summary Abstract: New evidence for dimer reconstruction on Ge(100) and Si(100)

1980 • 21 citations

Surface states and the surface structure of cleaved silicon

1978 • 21 citations

Electronic properties of clean and oxygen covered (100) cleaved surfaces of PbS

1980 • 21 citations

Surface-disorder effects in angle-resolved photoemission spectra

1984 • 20 citations

Interaction of hydrogen with GaAs (0 0 1)-2×4

1985 • 20 citations

No-phonon and phonon-assisted transitions in indirect<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">Ga</mml:mi><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">P</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>…

1977 • 20 citations

Mapping of conduction bands in GaAs by angle-resolved photoemission

1979 • 19 citations

Temperature dependence of surface electronic structure of Si(111) surface

1983 • 19 citations

Dangling bond electronic state on an InP(¯111) surface

1987 • 19 citations

Experimental surface state bands of the Si(111) 2 × 1 reconstruction

1982 • 18 citations

Photoemission from mbe grown III–V surfaces and interfaces

1983 • 18 citations

Study of solids and surfaces with polarization-dependent angle-resolved photoemission

1977 • 17 citations

Surface relaxation effects on the electronic structure of (111) and (111) surfaces of GaP, GaAs, and GaSb

1981 • 17 citations

Si(111)7×7-Ge and Si(111)5×5-Ge surfaces studied with angle-resolved photoemission

1986 • 17 citations

Photoemission study of the surface electronic structure of InSb(110)

1984 • 16 citations

Angular resolved photoemission measurements on clean and hydrogen covered Ge(111) surfaces

1982 • 16 citations

Density of states at the Si(111)-(2×1) surface: A study of the clean and H-covered surface

1983 • 15 citations

Electronic properties and surface geometry of GaAs and ZnO surfaces

1983 • 15 citations

Study of III–V semiconductor band structure by synchrotron photoemission

1983 • 14 citations

On the electronic structure of the Si(100)−2×1 surface

1983 • 13 citations

Angle-resolved photoemission from step-related surface states on vicinal surfaces of Si(001)

1987 • 13 citations

The electronic structure of cleaved silicon (111) surfaces following adsorption of aluminium

1980 • 13 citations

Time and angle resolved ultraviolet photoemission spectroscopy studies of single crystal surface and interfaces

1986 • 13 citations

Summary Abstract: Surface states at the (110) surface of InAs and InSb and the growth of AlAs at submonolayer coverage of Al studied by angle-resolved photoelectron spectroscopy

1986 • 12 citations

Angular-resolved initial state spectra for the relaxed GaAs (110) surface

1982 • 12 citations

Photoelectron spectroscopy of II–VI semiconductors under cooperative UV and visible excitation

1981 • 12 citations

Surface Electronic Structures of Ge(111) Surfaces as Revealed by Temperature Dependent UPS

1984 • 10 citations

Uhrberget al.Respond

1982 • 8 citations

Angle-resolved photoemission studies of the CdS band structure

1983 • 8 citations

Dangling bond surface state of Si(111): New results

1981 • 7 citations

Matrix-element effects in the angular-resolved photoemission from (111) silicon

1979 • 7 citations

Critical-point study of higher conduction bands in Si single crystal by angle-resolved photoemission

1983 • 7 citations

Defect‐induced surface states on cleaved GaAs (110)surfaces measured in UV photoemission

1979 • 6 citations

Low energy (6–10 eV) angular-resolved photoemission of Si(111)−(2 × 1) surface

1985 • 6 citations

Electronic structure and geometry of group IV semiconductor surfaces

1983 • 4 citations