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RHEED studies of Si(100) surface structures induced by Ga evaporation

Data up to Jan 2025

Published1981
Citations29
References21

Total Citations Per Year

Abstract

References (21)

Electrical Properties of Silicon Containing Arsenic and Boron

1954 • 985 citations

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1972 • 234 citations

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1965 • 213 citations

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1967 • 63 citations

Double diffraction spots in RHEED patterns from clean Ge(111) and Si(001) surfaces

1979 • 62 citations

A leed-aes study of thin Pd films on Si(111) and (100) substrates

1980 • 54 citations

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1966 • 52 citations

Growth of thin silicon films on sapphire and spinel by molecular beam epitaxy

1980 • 52 citations

The adsorption of Cs on the Si(100)2 × 1 surface

1977 • 52 citations

Three independent LEED studies of clean Si (100) surfaces

1977 • 48 citations

Si–MBE: Growth and Sb doping

1979 • 47 citations

Chemisorption and Schottky barrier formation of Ga on Si(111) 7×7

1976 • 31 citations

Effects of Ga and Si ionization on the growth of Ga doped Si MBE

1981 • 24 citations

Determination of diffusion, partition and sticking coefficients for boron, phosphorus and antimony in silicon

1975 • 17 citations

Color Gamut of a Nematic Liquid Crystal Display

1980 • 8 citations

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RHEED studies of Si(100) surface structures induced by Ga evaporation (1981) – Surface Science Letters | Metascience Observatory Explorer