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Atomic geometry of GaSb(110): Determination via elastic low-energy electron diffraction intensity analysis

Data up to Jan 2025

Published1983
Citations37
References24

Total Citations Per Year

Abstract

References (24)

Ionicity of the Chemical Bond in Crystals

1970 • 1,798 citations

The structure and properties of metal-semiconductor interfaces

1982 • 908 citations

Unified defect model and beyond

1980 • 640 citations

FUNDAMENTAL TRANSITION IN THE ELECTRONIC NATURE OF SOLIDS

1969 • 596 citations

Metal-semiconductor surface barriers

1966 • 457 citations

A reliability factor for surface structure determinations by low-energy electron diffraction

1977 • 427 citations

(110) surface atomic structures of covalent and ionic semiconductors

1979 • 330 citations

Dynamical calculation of low-energy electron diffraction intensities from GaAs(110): Influence of boundary conditions, exchange potential, lattice vibrations, and multilayer reconstructions

1979 • 140 citations

Atomic geometry of cleavage surfaces of tetrahedrally coordinated compound semiconductors

1976 • 109 citations

Dynamical analysis of low-energy-electron-diffraction intensities from CdTe(110)

1981 • 78 citations

Dynamical analysis of low-energy-electron diffraction intensities from InP (110)

1980 • 65 citations

Dynamical analysis of low-energy-electron-diffraction intensities from GaP(110)

1981 • 63 citations

Trends in surface atomic geometries of compound semiconductors

1980 • 60 citations

Dynamical analysis of low-energy-electron-diffraction intensities from InSb(110)

1980 • 57 citations

Microscopic theory of covalent-ionic transition at metal-semiconductor interfaces

1973 • 47 citations

Dielectric continuum theory of the electronic structure of interfaces

1976 • 44 citations

Chemical and electronic structure of compound semiconductor–metal interfaces

1982 • 37 citations

Über die röntgenographische Analyse der mittleren quadratischen Atomverschiebungen in einigen Halbleiterkristallen

1977 • 33 citations

The influence of electron exchange and relativistic corrections on elastic low energy electron diffraction from compound semiconductors

1982 • 29 citations

Analysis of low-energy electron diffraction intensities from ZnS(110)

1981 • 28 citations

Surface structure of ZnTe (110) as determined from dynamical analysis of low-energy-electron diffraction intensities

1980 • 27 citations

Atomic structure of GaP (110) and (111) faces

1981 • 21 citations

Electronic energy levels of point defects at the GaSb (110) surface

1982 • 16 citations

Surface structure and bonding

1976 • 8 citations

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Atomic geometry of GaSb(110): Determination via elastic low-energy electron diffraction… (1983) – Physical review. B, Condensed matter | Metascience Observatory Explorer