Some electrical properties of the silicon-silicon dioxide system
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Abstract
References (42)
General Relationship for the Thermal Oxidation of Silicon
1965 • 3,245 citations
Physics and technology of semiconductor devices
1967 • 2,850 citations
An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes
1962 • 1,405 citations
Semiconductor Surfaces
1966 • 801 citations
Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon
1967 • 697 citations
Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions
1966 • 434 citations
Photoemission of Electrons from Silicon into Silicon Dioxide
1965 • 433 citations
The effects of oxide traps on the MOS capacitance
1965 • 430 citations
A Floating Gate and Its Application to Memory Devices
1967 • 414 citations
DENSITY OF SiO2–Si INTERFACE STATES
1966 • 404 citations
MOS CONDUCTANCE TECHNIQUE FOR MEASURING SURFACE STATE PARAMETERS
1965 • 357 citations
Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of Silicon
1964 • 330 citations
Properties of gold in silicon
1966 • 311 citations
Stabilization of Silicon Surfaces by Thermally Grown Oxides*
1959 • 240 citations
Barrier energies in metal-silicon dioxide-silicon structures
1966 • 238 citations
Photocurrent, Space-Charge Buildup, and Field Emission in Alkali Halide Crystals
1953 • 224 citations
Metal-silicon Schottky barriers
1968 • 153 citations
Photoemission of Electrons from Silicon and Gold into Silicon Dioxide
1966 • 147 citations
SURFACE STATES IN SILICON FROM CHARGES IN THE OXIDE COATING
1968 • 141 citations
Sodium distribution in thermal oxide on silicon by radiochemical and MOS analysis
1966 • 126 citations
Polarization Phenomena and Other Properties of Phosphosilicate Glass Films on Silicon
1966 • 124 citations
Stabilization of SiO2 Passivation Layers with P2O5
1964 • 120 citations
Observation of Impurity Redistribution During Thermal Oxidation of Silicon Using the MOS Structure
1965 • 120 citations
Investigation of Silicon-Silicon Dioxide Interface Using MOS Structure
1966 • 101 citations
Impurity Redistribution and Junction Formation in Silicon by Thermal Oxidation
1960 • 78 citations
Photoemission of Electrons from Metals into Silicon Dioxide
1966 • 77 citations
The defect structure of grown silicon dioxide films
1965 • 59 citations
CHARGE STORAGE MODEL FOR VARIABLE THRESHOLD FET MEMORY ELEMENT
1969 • 57 citations
Diffusion of gallium through a silicon dioxide layer
1964 • 49 citations
Al2O3-SILICON INSULATED GATE FIELD EFFECT TRANSISTORS
1968 • 49 citations
Properties of Gold Doped MOS Structures
1967 • 46 citations
Photoemission of Electrons from Silicon into Silicon Dioxide. Effects of Ion Migration in the Oxide
1966 • 45 citations
Interface states and interface disorder in the Si-SiO2 system
1967 • 42 citations
MEMORY BEHAVIOR OF AN MNS CAPACITOR
1968 • 40 citations
The influence of oxidation rate and heat treatment on the Si surface potential in the Si-SiO<inf>2</inf>system
1966 • 34 citations
The effect of ambient, temperature and cooling rate, on the surface charge at the silicon/ silicon dioxide interface†
1968 • 24 citations
Effects of ionizing radiation on MOS devices
1969 • 23 citations
Effect of diffused oxygen and gold on surface properties of oxidized silicon
1967 • 23 citations
Effect of gold on surface properties and leakage current of MOS transistors
1967 • 18 citations
Stability and surface charge in the MOS system†
1968 • 16 citations
Further Observations on the Oxidation of Zirconium in Dry Oxygen
1967 • 5 citations
The application of silicon nitride in the MIS system†
1968 • 2 citations