Interface states and interface disorder in the Si-SiO2 system

DENSITY OF SiO2–Si INTERFACE STATES

1966 • 404 citations

On the Logarithmic Rate Law in Chemisorption and Oxidation

1955 • 141 citations

<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Surface Conductivity on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-Type Germanium

1953 • 132 citations

Limitations of the MOS capacitance method for the determination of semiconductor surface properties

1965 • 130 citations

EFFECT OF CRYSTAL ORIENTATION ON OXIDATION RATES OF SILICON IN HIGH PRESSURE STEAM

1961 • 129 citations

Field Effect‐Capacitance Analysis of Surface States on Silicon

1963 • 115 citations

The defect structure of grown silicon dioxide films

1965 • 59 citations

Orientation dependence of built-in surface charge on thermally oxidized Silicon

1965 • 36 citations

The influence of oxidation rate and heat treatment on the Si surface potential in the Si-SiO&lt;inf&gt;2&lt;/inf&gt;system

1966 • 34 citations

Effect of Orientation on Surface Charge Density at Silicon-Silicon Dioxide Interface

1965 • 30 citations

Field effect studies of the oxidized silicon surface

1966 • 28 citations

ELECTROCHEMISTRY OF THE SILICON‐ELECTROLYTE INTERFACE

1963 • 16 citations

Mutual transformation of thermal and anodic SiO2 films

1966 • 14 citations

Hydrogen-induced surface space-charge regions in oxide-protected silicon

1965 • 14 citations

Taxonomy of electric charges in metal-insulator-semiconductor systems

1966 • 6 citations

Automatic display of C-V curves for metal-insulator-semiconductor (MIS) structures

1966 • 3 citations