Unpinned GaAs Schottky barriers with an epitaxial silicon layer

The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various Temperatures

1931 • 1,398 citations

Surfactants in epitaxial growth

1989 • 1,091 citations

New and unified model for Schottky barrier and III–V insulator interface states formation

1979 • 917 citations

Theory of semiconductor heterojunctions: The role of quantum dipoles

1984 • 838 citations

Gallium arsenide and other compound semiconductors on silicon

1990 • 573 citations

Physics and Chemistry of III-V Compound Semiconductor Interfaces

1985 • 520 citations

Microscopic study of semiconductor heterojunctions: Photoemission measurement of the valance-band discontinuity and of the potential barriers

1983 • 319 citations

Control of Schottky barrier height using highly doped surface layers

1976 • 266 citations

Alloyed ohmic contacts to GaAs

1981 • 236 citations

Ohmic contacts to n-GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxy

1981 • 193 citations

Unpinned GaAs MOS capacitors and transistors

1988 • 155 citations

GaAs metallization: Some problems and trends

1981 • 141 citations

Gallium arsenide : materials devices and circuits

1985 • 139 citations

Electronic and microstructural properties of disorder-induced gap states at compound semiconductor–insulator interfaces

1987 • 112 citations

GaAs MIS structures with SiO2 using a thin silicon interlayer

1988 • 66 citations

Behavior of AlSi Schottky barrier diodes under heat treatment

1973 • 56 citations

Barrier height variation in Al/GaAs Schottky diodes with a thin silicon interfacial layer

1991 • 54 citations

Silicon molecular beam epitaxy on gallium arsenide

1985 • 34 citations

Wide range of Schottky barrier height for metal contacts to GaAs controlled by Si interface layers

1988 • 29 citations

Antiphase-domain-free GaAs grown on pseudomorphic Si (100) surfaces by molecular beam epitaxy

1990 • 28 citations

Performance of a Focused-Ion-Beam Implanter with Tilt-Writing Function

1989 • 15 citations

Effect of the presence of an inversion layer in an MPN structure

1982 • 10 citations

Advantages of metallic-amorphous-Silicon-gate FET's in GaAs LSI applications

1986 • 10 citations

Effect of thin Ge layer on the surface depletion in GaAs

1990 • 9 citations

The Si/GaAs(110) heterojunction discontinuity: Amorphous versus crystalline overlayers

1987 • 8 citations

A new approach to the determination of MS-barrier heights from photoelectric data and/or an alternative way to determine the value of the Richardson constant

1982 • 7 citations

Fermi-level pinning and heavily doped overlayers

1988 • 7 citations

Chemical reactions at the Si/GaAs(110) and Si/InP(110) interfaces: Effects on valence-band discontinuity measurements

1988 • 6 citations

Modification of GaAs Schottky barriers using a-Si:H interfacial layers

1990 • 3 citations

Improved breakdown for SOI MOSFETs fabricated in electron-beam recrystallized polysilicon

1988 • 1 citations