Control of Schottky barrier height using highly doped surface layers

Field and thermionic-field emission in Schottky barriers

1966 • 1,293 citations

AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p-n JUNCTIONS IN Ge, Si, GaAs, AND GaP

1966 • 441 citations

Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers

1969 • 399 citations

Rectifying Semiconductor Contacts

1956 • 290 citations

Carrier transport across metal-semiconductor barriers

1970 • 248 citations

Reducing the effective height of a Schottky barrier using low-energy ion implantation

1974 • 166 citations

Increasing the effective height of a Schottky barrier using low-energy ion implantation

1974 • 123 citations

Rectifying semiconductor contacts

1958 • 109 citations

Richardson constant and tunneling effective mass for thermionic and thermionic-field emission in Schottky barrier diodes

1969 • 95 citations

Dependence of Schottky Barrier Height on Donor Concentration

1970 • 52 citations

Transport Properties of the Gold Germanium Gallium Arsenide Metal Semiconductor System

1971 • 30 citations

Elements of Wave Mechanics

1953 • 26 citations

Heavy ion ranges at 100 keV in aluminium

1973 • 18 citations

The Elements of Wave Mechanics1

1928 • 5 citations