Effect of thin Ge layer on the surface depletion in GaAs

Semiconductor Devices: Physics and Technology

1985 • 4,110 citations

Third-derivative modulation spectroscopy with low-field electroreflectance

1973 • 1,171 citations

Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eV

1975 • 612 citations

Physics and Chemistry of III-V Compound Semiconductor Interfaces

1985 • 520 citations

Control of compound semiconductor–insulator interfaces by an ultrathin molecular-beam epitaxy Si layer

1989 • 106 citations

Electrical properties of the gallium arsenide–insulator interface

1978 • 77 citations

Independence of Fermi-Level Position and Valence-Band Edge Discontinuity at GaAs-Ge(100) Interfaces

1984 • 59 citations

Variation of n-GaAs (100) interface Fermi level by Ge and Si overlayers

1987 • 52 citations

Photoreflectance and the electric fields in a GaAs depletion region

1990 • 38 citations

Photoreflectance measurements of unintentional impurity concentrations in undoped GaAs

1989 • 25 citations

Electrical characteristics of p+-Ge/(N-GaAs and N-AlGaAs) junctions and their applications to Ge base transistors

1990 • 16 citations