Advantages of metallic-amorphous-Silicon-gate FET's in GaAs LSI applications

SLT Device Metallurgy and its Monolithic Extension

1969 • 240 citations

Femtojoule high speed planar GaAs E-JFET logic

1978 • 80 citations

Self-align implantation for n+-layer technology (SAINT) for high-speed GaAs ICs

1982 • 74 citations

Silicon-Germanium-Boron Ternary Amorphous Alloy

1982 • 32 citations

Improvement of field-effect transistor threshold voltage uniformity by using very low dislocation density liquid encapsulated Czochralski-grown GaAs

1984 • 23 citations

Amorphous Silicon-Germanium-Boron Alloy Applied to Low-Loss and High-Speed Diodes

1982 • 13 citations

Barrier Heights of Junctions between Amorphous Si-Ge-B and Crystalline GaAs

1985 • 11 citations

A Large Barrier Height Schottky Contact between Amorphous Si–Ge–B and GaAs

1983 • 9 citations

N⁺ Self-Aligned MESFET for GaAs LSIs

1983 • 7 citations

Properties of multicomponent amorphous silicon forming a tetrahedrally-bonded continuous random network

1983 • 4 citations

GaAs Digital Integrated Circuits

1983 • 1 citations