Antiphase-domain-free GaAs grown on pseudomorphic Si (100) surfaces by molecular beam epitaxy

Polar-on-nonpolar epitaxy

1987 • 493 citations

Material properties of high-quality GaAs epitaxial layers grown on Si substrates

1986 • 267 citations

Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)

1984 • 244 citations

Self-Annihilation of Antiphase Boundary in GaAs on Si(100) Grown by Molecular Beam Epitaxy

1987 • 119 citations

Suppression of antiphase domains in the growth of GaAs on Ge(100) by molecular beam epitaxy

1987 • 74 citations

Direct evidence for self-annihilation of antiphase domains in GaAs/Si heterostructures

1989 • 53 citations

Effect of As4 overpressure on initial growth of gallium arsenide on silicon by molecular beam epitaxy

1989 • 35 citations

The Growth of Single Domain GaAs Films on Double Domain Si(001) Substrates by Molecular Beam Epitaxy

1987 • 34 citations