Properties of low-pressure CVD tungsten silicide for MOS VLSI interconnections

A quasi-static technique for MOS C-V and surface state measurements

1970 • 548 citations

1 µm MOSFET VLSI technology: Part VII—Metal silicide interconnection technology—A future perspective

1979 • 167 citations

Observations on the hexagonal form of MoSi2 and WSi2 films produced by ion implantation and on related snowplow effects

1980 • 135 citations

Refractory silicides of titanium and tantalum for low-resistivity gates and interconnects

1980 • 105 citations

Speed limitations due to interconnect time constants in VLSI integrated circuits

1982 • 78 citations

Kinetics of the thermal oxidation of WSi2

1979 • 68 citations

Properties of tungsten silicide film on polycrystalline silicon

1981 • 67 citations

Composite silicide gate electrodes—Interconnections for VLSI device technologies

1980 • 62 citations

The evolution of digital electronics towards VLSI

1979 • 61 citations

Properties of Sputtered Tungsten Silicide for MOS Integrated Circuit Applications

1980 • 57 citations

Film properties of MoSi₂and their application to self-aligned MoSi₂gate MOSFET

1980 • 53 citations

MOS Compatibility of high-conductivity TaSi₂/n⁺poly-Si gates

1980 • 53 citations

Interface effects in the formation of silicon oxide on metal silicide layers over silicon substrates

1983 • 46 citations

Metal Silicon Reactions Induced by CW Scanned Laser and Electron Beams

1981 • 44 citations

Properties of Molybdenum Silicide Film Deposited by Chemical Vapor Deposition

1983 • 42 citations

Properties of Sputtered Molybdenum Silicide Thin Films

1983 • 21 citations

Studies of steam-oxidized WSi2 by Auger sputter profiling

1980 • 14 citations

WSi<inf>2</inf>gate MOS devices

1979 • 6 citations