A physical model for drift in pH ISFETs

Numerical recipes: the art of scientific computing

1987 • 3,090 citations

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1975 • 2,990 citations

Local-field effects and effective-medium theory: A microscopic perspective

1982 • 718 citations

Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon

1987 • 613 citations

Methods of isfet fabrication

1981 • 335 citations

Time-dependent electrical transport in amorphous solids:<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Se</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow…

1977 • 264 citations

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1985 • 229 citations

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1987 • 218 citations

Integrated Micro Multi Ion Sensor Using Field Effect of Semiconductor

1978 • 200 citations

The role of buried OH sites in the response mechanism of inorganic-gate pH-sensitive ISFETs

1984 • 196 citations

Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study

1988 • 174 citations

Hysteresis in Al2O3-gate ISFETs

1990 • 169 citations

Identification of electron traps in thermal silicon dioxide films

1981 • 138 citations

A physical model for threshold voltage instability in Si/sub 3/N/sub 4/-gate H/sup +/-sensitive FET's (pH ISFET's)

1998 • 130 citations

An Integrated Sensor for Electrochemical Measurements

1986 • 112 citations

<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>CP</mml:mi></mml:math>Nonconservation in the Partial Decay Rates of Charm and Beauty Mesons

1984 • 57 citations

Drift behaviour of ISFETs with Si3N4-SiO2 gate insulator

1993 • 42 citations

The Si₃N₄/Si ion-sensitive semiconductor electrode

1979 • 34 citations

Gate-controlled diodes for ionic concentration measurement

1979 • 33 citations

Kinetics and drift of gate voltages for electrolyte-bathed chemically sensitive semiconductor devices

1982 • 30 citations

A physically-based model for drift in Al/sub 2/O/sub 3/-gate pH ISFET's

2002 • 22 citations

Influence of the degradation on the surface states and electrical characteristics of EOS structures

1991 • 12 citations

Analysis of the Structure and Drift of Al2O3 Layers used as pH-Sensitive Material for pH-ISFETs

1987 • 6 citations

Stability of Aluminum Oxide Films on Germanium Devices

1969 • 6 citations