Drift behaviour of ISFETs with Si3N4-SiO2 gate insulator

Peter Hein, P. Egger

DOI: 10.1016/0925-4005(93)85131-s

Sensors and Actuators B Chemical

Data up to Jan 2025

Published1993

Citations42

References1

Fields

Materials science Chemistry Optoelectronics Nanotechnology Physical chemistry

Total Citations Per Year

Abstract

References (1)

Time-dependent response characteristics of pH-sensitive ISFET

1991 • 42 citations

Cited By (0)

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