Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study

Hole traps and trivalent silicon centers in metal/oxide/silicon devices

1984 • 710 citations

Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon Carbide

1969 • 441 citations

<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mi>E</mml:mi></mml:mrow><mml:mrow><mml:mo>′</mml:mo></mml:mrow></mml:msup></mml:mrow></mml:math>center in glassy Si<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>:<mml:math xmlns:mml="http://www.w3.org/1998/Math…

1980 • 174 citations

Silicon nitride trap properties as revealed by charge−centroid measurements on MNOS devices

1975 • 155 citations

High-field transport in SiO2 on silicon induced by corona charging of the unmetallized surface

1976 • 150 citations

Metastable Defects in Amorphous-Silicon Thin-Film Transistors

1986 • 136 citations

Dangling Bonds in Memory‐Quality Silicon Nitride Films

1985 • 131 citations

Properties of Hydrogenated Amorphous Si-N Prepared by Various Methods

1985 • 99 citations

Composition and Structure Control by Source Gas Ratio in LPCVD SiN x

1983 • 91 citations

The preparation and C-V characteristics of SiSi3N4 and SiSiO2Si3N4 structures

1967 • 87 citations

Hydrogen-related memory traps in thin silicon nitride films

1983 • 76 citations

Stable photoinduced paramagnetic defects in hydrogenated amorphous silicon nitride

1987 • 63 citations

Defects in amorphous Si-N films prepared by RF sputtering

1982 • 62 citations

Valence alternation pair model of charge storage in MNOS memory devices

1979 • 57 citations

Electron Spin Resonance in Discharge-Produced Silicon Nitride

1981 • 54 citations

Electron-spin-resonance study of defects in plasma-enhanced chemical vapor deposited silicon nitride

1988 • 54 citations

Empirical study of the metal-nitride-oxide-semiconductor device characteristics deduced from a microscopic model of memory traps

1982 • 45 citations

Simple technique for determination of centroid of nitride charge in MNOS structures

1975 • 44 citations

Bonds and Defects in Plasma-Deposited Silicon Nitride Using SiH₄-NH₃-Ar Mixture

1986 • 40 citations

Charge storage and distribution in the nitride layer of the metal-nitride-oxide semiconductor structures

1981 • 40 citations

Photo-Induced ESR in Amorphous Si_1-xN_x:H Films

1984 • 36 citations

High efficiency inversion layer solar cells on polycrystalline silicon by the application of silicon nitride

1981 • 34 citations

Charge centroid and trapping model for MNOS structures

1976 • 32 citations

Calculations of the g‐value and linewidth of the esr signal in amorpous silicon nitride

1982 • 32 citations

SOME OBSERVATIONS ON THE ELECTRON PARAMAGNETIC RESONANCE SPECTRA OF GASEOUS FREE RADICALS

1960 • 32 citations

ESR Studies on the Light-Induced Effect in Si-Based Amorphous Semiconductors

1985 • 30 citations