A physical model for threshold voltage instability in Si/sub 3/N/sub 4/-gate H/sup +/-sensitive FET's (pH ISFET's)

Anomalous transit-time dispersion in amorphous solids

1975 • 2,990 citations

Development of an Ion-Sensitive Solid-State Device for Neurophysiological Measurements

1970 • 1,982 citations

Local-field effects and effective-medium theory: A microscopic perspective

1982 • 718 citations

Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon

1987 • 613 citations

Operation of chemically sensitive field-effect sensors as a function of the insulator-electrolyte interface

1983 • 558 citations

On the Williams—Watts function of dielectric relaxation

1984 • 377 citations

A general model to describe the electrostatic potential at electrolyte oxide interfaces

1996 • 375 citations

Methods of isfet fabrication

1981 • 335 citations

A generalized theory of an electrolyte-insulator-semiconductor field-effect transistor

1986 • 323 citations

Defect equilibria in undopeda-Si:H

1989 • 291 citations

Basic properties of the electrolyte—SiO₂—Si system: Physical and theoretical aspects

1979 • 268 citations

Time-dependent electrical transport in amorphous solids:<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Se</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow…

1977 • 264 citations

Solid State Chemical Sensors

1985 • 229 citations

Ion-sensing devices with silicon nitride and borosilicate glass insulators

1987 • 218 citations

Integrated Micro Multi Ion Sensor Using Field Effect of Semiconductor

1978 • 200 citations

The role of buried OH sites in the response mechanism of inorganic-gate pH-sensitive ISFETs

1984 • 196 citations

Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study

1988 • 174 citations

ISFET's using inorganic gate thin films

1979 • 168 citations

Connection between the Meyer-Neldel relation and multiple-trapping transport

1988 • 144 citations

Comprehensive analytical chemistry

1961 • 132 citations

An Integrated Sensor for Electrochemical Measurements

1986 • 112 citations

Drift behaviour of ISFETs with Si3N4-SiO2 gate insulator

1993 • 42 citations

Dependence of interface state properties of electrolyte-SiO₂-Si structures on pH

1982 • 36 citations

The Si₃N₄/Si ion-sensitive semiconductor electrode

1979 • 34 citations

Gate-controlled diodes for ionic concentration measurement

1979 • 33 citations

The Selectivity and Temperature Characteristics of Ion Sensitive Field Effect Transistors

1978 • 32 citations

Kinetics and drift of gate voltages for electrolyte-bathed chemically sensitive semiconductor devices

1982 • 30 citations

Influence of the degradation on the surface states and electrical characteristics of EOS structures

1991 • 12 citations