Electron-beam-induced current and photoetching investigations of dislocations and impurity atmospheres in n-type liquid-encapsulated Czochralski GaAs

Metal-semiconductor Contacts

2005 • 3,989 citations

Charge collection scanning electron microscopy

1982 • 765 citations

Semi-Insulating III–V Materials

1980 • 735 citations

Identification of AsGa antisites in plastically deformed GaAs

1982 • 386 citations

Properties of gallium arsenide

1996 • 349 citations

Stoichiometry-controlled compensation in liquid encapsulated Czochralski GaAs

1982 • 294 citations

Investigation of minority-carrier diffusion lengths by electron bombardment of Schottky barriers

1978 • 280 citations

Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasers

1974 • 170 citations

Dislocation climb model in compound semiconductors with zinc blende structure

1976 • 168 citations

Arsenic precipitation at dislocations in GaAs substrate material

1980 • 139 citations

Defect recognition and image processing in III-V compounds

1986 • 94 citations

The Structure And Electrical Properties Of Dislocations In Semiconductors

1980 • 91 citations

Selective etching and photoetching of GaAs in CrO3-HF aqueous solutions

1986 • 85 citations

Selective etching and photoetching of {100} gallium arsenide in CrO3-HF aqueous solutions

1983 • 85 citations

Frequency dependence of of Schottky barriers containing deep impurities

1973 • 77 citations

Kinetics and Morphology of GaAs Etching in Aqueous CrO3 ‐ HF Solutions

1986 • 66 citations

Role of Dislocations in Semi-Insulation Mechanism in Undoped LEC GaAs Crystal

1982 • 52 citations

The electrical recombination efficiency of individual edge dislocations and stacking fault defects in n-type silicon

1979 • 52 citations

Mechanism for the threshold voltage shift of a GaAs field-effect transistor around dislocations

1986 • 51 citations

On the sensitivity of the EBIC technique as applied to defect investigations in silicon

1981 • 49 citations

Evaluation of a New Polish for Gallium Arsenide Using a Peroxide-Alkaline Solution

1971 • 49 citations

On the real structure of monocrystalline silicon near dislocation slip planes

1981 • 44 citations

Combined scanning (EBIC) and transmission electron microscopic investigations of dislocations in semiconductors

1979 • 43 citations

SEM cathode-luminescent studies of plastically deformed gallium phosphide

1975 • 36 citations

Spatial distribution of 0.68-eV emission from undoped semi-insulating gallium arsenide revealed by high resolution luminescence imaging

1985 • 33 citations

Recombination properties of dislocation slip planes

1986 • 28 citations

SEM cathodoluminescence studies of dislocation recombination in GaP

1978 • 28 citations

Spatially resolved electrical and spectroscopic studies around dislocations in GaAs single crystals

1984 • 27 citations

Mechanism for the creation of antisite defects, during combined climb-glide motion of dislocations in sphalerite-structure crystals

1985 • 26 citations

On the Physical Origins of the EL2 Center in GaAs

1986 • 25 citations

Study of Segregation Inhomogeneities in GaAs by Means of DSL Photoetching and EBIC Measurements

1989 • 23 citations

Defect states in plastically deformed p-type silicon crystals investigated by the Hall effect

1983 • 18 citations

Interaction between dislocations and In in In-doped GaAs single crystals under high-temperature plastic deformation

1988 • 17 citations

On the metastability of the EL2 defect in plastically deformed GaAs

1987 • 15 citations

Native Point Defects and Nonstoichiometry in GaAs (II) Mechanism of Formation and Degradation of Semiinsulating Properties of Undoped Gallium Arsenide Crystals

1986 • 11 citations

SEM and TEM studies of defects in Si‐doped GaAs substrate material before and after Zn diffusion

1980 • 10 citations

Analysis of charge-collection efficiency measurements in Schottky diodes

1988 • 9 citations

The effect of crystal defects on the performance of gaas solar cells

1987 • 6 citations

CREATION OF As_Ga DEFECTS BY PLASTIC DEFORMATION OF GaAs CRYSTALS

1983 • 6 citations

A new etch feature in germanium- and silicon-doped lec gallium arsenide

1984 • 4 citations

COMBINED ELECTRON MICROSCOPICAL AND DLTS (ESP, DSLTS) INVESTIGATIONS IN SEMICONDUCTORS

1983 • 2 citations