A new etch feature in germanium- and silicon-doped lec gallium arsenide

The Nature of the Chemical Bond

1939 • 13,296 citations

Etching of Dislocations on the Low-Index Faces of GaAs

1965 • 337 citations

Stoichiometry-controlled compensation in liquid encapsulated Czochralski GaAs

1982 • 294 citations

Stacking fault energy and ionicity of cubic III–V compounds

1978 • 290 citations

Revised calculation of point defect equilibria and non-stoichiometry in gallium arsenide

1979 • 145 citations

Arsenic precipitation at dislocations in GaAs substrate material

1980 • 139 citations

Dislocation Etch Pits in Single Crystal GaAs

1969 • 99 citations

Direct observation of the principal deep level (EL2) in undoped semi-insulating GaAs

1983 • 92 citations

Inhomogeneous GaAs FET Threshold Voltages Related to Dislocation Distribution

1982 • 77 citations

Si-defect concentrations in heavily Si-doped GaAs: Changes induced by annealing

1974 • 71 citations

The dissociation of dislocations in GaAs

1978 • 65 citations

A study on the relationship between growth technique and dopants on the electrical properties of GaAs with special reference to LEC growth

1980 • 47 citations

Dislocation-free GaAs by the liquid encapsulation technique

1972 • 38 citations

Correlation between Dislocation Distribution and FET Performances Observed in Low Cr Doped LEC GaAs

1983 • 32 citations

Etch pits and dislocations in {100} GaAs wafers

1975 • 25 citations

The identification of saucer-pit (S-pit) defects in GaAs

1978 • 24 citations

Dislocation Etch Pits in GaAs

1964 • 20 citations

Microscopy Of Semi‐Insulating Gallium Arsenide

1980 • 18 citations

Dislocation Density and Sheet Resistance Variations Across Semi-Insulating GaAs Wafers

1982 • 14 citations

Etching Characterization of {001} Semi-Insulating GaAs Wafers

1983 • 13 citations

Shallow defect etching of GaAs using AB solution under laser illumination

1981 • 11 citations

EPD investigation in LEC‐grown silicon‐doped gallium arsenide

1983 • 11 citations

Surface preparation of single crystal n-type GaAs substrates studied by the channeling technique

1971 • 10 citations