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Spatial distribution of 0.68-eV emission from undoped semi-insulating gallium arsenide revealed by high resolution luminescence imaging

C. A. Warwick, G. T. Brown
DOI: 10.1063/1.95544
Applied Physics Letters

Data up to Jan 2025

Published1985
Citations33
References6
Fields
Materials sciencePhysicsComputer scienceOptoelectronicsOpticsCondensed matter physics

Total Citations Per Year

Abstract

References (6)

Semi-Insulating III–V Materials

1980 • 735 citations

Inhomogeneous GaAs FET Threshold Voltages Related to Dislocation Distribution

1982 • 77 citations

Quenching effect of luminescence in bulk semi-insulating GaAs

1982 • 61 citations

Persistent photoluminescence quenching of 0.68-eV emission in undoped semi-insulating GaAs

1984 • 51 citations

Inhomogeneity of the deep center el2 in GaAs observed by direct infra-red imaging

1984 • 31 citations

Uniformity characterization of semi-insulating GaAs by cathodoluminescence imaging

1984 • 26 citations

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