A study of stress-induced p/sup +//n salicided junction leakage failure and optimized process conditions for sub-0.15-μm CMOS technology

A study of the leakage mechanisms of silicided n+/p junctions

1988 • 130 citations

Characterization of shallow silicided junctions for sub-quarter micron ULSI technology. Extraction of silicidation induced Schottky contact area

2000 • 58 citations

Novel corner rounding process for shallow trench isolation utilizing MSTS (Micro-Structure Transformation of Silicon)

2002 • 29 citations

Silicide and Shallow Trench Isolation line width dependent stress induced junction leakage

2002 • 22 citations

A silicidation-induced process consideration for forming scale-down silicided junction

1994 • 21 citations

Leakage mechanism and optimized conditioms of Co salicide process for deep-submicron CMOS devices

2002 • 19 citations

Arsenic and phosphorus double ion implanted source/drain junction for 0.25and sub-0.25-μm MOSFET technology

1999 • 19 citations

Stress analysis of shallow trench isolation for 256 M DRAM and beyond

2002 • 16 citations

High performance fully selective double recess InAlAs/InGaAs/InP HEMTs

2000 • 15 citations

Modeling of cumulative thermo-mechanical stress (CTMS) produced by the shallow trench isolation process for 1 Gb DRAM and beyond

2002 • 11 citations

Abnormal junction profile of silicided p/sup +//n shallow junctions: a leakage mechanism

2002 • 11 citations

High thermal stability and low junction leakage current of Ti capped Co salicide and its feasibility for high thermal budget CMOS devices

2002 • 11 citations

Transmission Electron Microscopy Study of Two-Dimensional Dopant Profiling in Metal-Oxide-Semiconductor Field Effect Transistor Test Structures and Devices

2000 • 9 citations

BF₂ and boron double-implanted source/drain junctions for sub-0.25-μm CMOS technology

2000 • 4 citations

Abnormal Junction Profile of Submicrometer Complementary Metal Oxide Semiconductor Devices with Co Silicidation and Shallow Trench Isolation Processes

2001 • 4 citations

The effects of stress on the formation of titanium silicide

2002 • 1 citations