Leakage mechanism and optimized conditioms of Co salicide process for deep-submicron CMOS devices

Ken‐ichi Goto, I. Fushida, J. Watanabe, T. Sukegawa, Keisuke Kawamura

DOI: 10.1109/iedm.1995.499235

Data up to Jan 2025

Published2002

Citations19

References2

Fields

Materials science Engineering Economics Optoelectronics Electronic engineering Electrical engineering

Total Citations Per Year

Abstract

References (2)

A study of the leakage mechanisms of silicided n+/p junctions

1988 • 130 citations

A silicidation-induced process consideration for forming scale-down silicided junction

1994 • 21 citations

Cited By (0)

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