Back to search

The formation of silicides in Mo-W Bilayer films on si substrates: A marker experiment

Data up to Jan 2025

Published1979
Citations75
References39

Total Citations Per Year

Abstract

References (39)

Semiconductor Silicon

1989 • 1,795 citations

Thin Films—Interdiffusion and Reactions

1979 • 1,683 citations

Standard X-Ray Diffraction Powder Patterns

1954 • 653 citations

Applications of Ion Beams to Metals

1974 • 433 citations

A review of the theory and technology for ohmic contacts to group III–V compound semiconductors

1975 • 374 citations

Implanted noble gas atoms as diffusion markers in silicide formation

1975 • 266 citations

Selective growth of metal-rich silicide of near-noble metals

1975 • 249 citations

High Temperature Materials

2008 • 206 citations

Interactions in the Co/Si thin-film system. I. Kinetics

1978 • 195 citations

Growth Kinetics Observed in the Formation of Metal Silicides on Silicon

1972 • 179 citations

Kinetics and mechanism of platinum silicide formation on silicon

1974 • 159 citations

Oxidation mechanisms in WSi2 thin films

1978 • 119 citations

Iron silicide thin film formation at low temperatures

1975 • 117 citations

Untitled

1979 • 117 citations

Metallurgical properties and electrical characteristics of palladium silicide-silicon contacts

1971 • 116 citations

Reaction kinetics of tungsten thin films on silicon (100) surfaces

1973 • 92 citations

Reaction kinetics of molybdenum thin films on silicon (111) surface

1978 • 85 citations

An alternative marker experiment in the formation of Mo and W silicides

1978 • 62 citations

Marker studies of silicide formation, silicon self-diffusion and silicon epitaxy using radioactive silicon and Rutherford backscattering

1978 • 59 citations

Tungsten as a marker in thin-film diffusion studies

1976 • 54 citations

On the formation of Ni and Pt silicide first phase: The dominant role of reaction kinetics

1978 • 54 citations

Radioactive silicon as a marker in thin-film silicide formation

1977 • 52 citations

Electrical characteristics of palladium silicide

1978 • 46 citations

Radioactive silicon tracer studies of the formation of CrSi2on Pd2Si and PtSi

1978 • 45 citations

Protection of molybdenum from oxidation by molybdenum disilicide based coatings

1964 • 43 citations

Silicide formation with bilayers of Pd-Pt, Pd-Ni, and Pt-Ni

1979 • 39 citations

Analysis of formation of hafnium silicide on silicon

1973 • 37 citations

Electrical Properties of Platinum-Silicon Contact Annealed in an H2Ambient

1978 • 35 citations

Investigation of Cation‐Transport Processes during Anodic Oxidation of Duplex Layers of Tantalum on Niobium by the Use of Rutherford Backscattering and Nuclear Microanalysis

1978 • 33 citations

Plenum Press handbooks of high-temperature materials. No. 2. Properties Index by G. V. Samsonov

1965 • 26 citations

Silicidbildung in dünnen molybdän- und wolframschichten auf einkristallinen siliziumsubstraten bei relativ niedrigen temperaturen

1976 • 25 citations

The interaction process for Ag-Al polycrystalline thin-film couples

1979 • 23 citations

Silicon diffusion through thin tungsten films on silicon, studied with Auger spectroscopy

1973 • 20 citations

Kinetics of WSi2 formation in the thin-film system W/PtSi/Si

1973 • 19 citations

Volume interdiffusion in the molybdenum–tungsten system

1971 • 19 citations

The Formation of Molybdenum Disilicide Coatings on Molybdenum

1951 • 17 citations

Stress-enhanced diffusion in thin films

1970 • 14 citations

Epitaxial Relations in Films of Cr, Pt, and CrPt on Sapphire

1979 • 13 citations

Ion Backscattering Study of WSi2 Layer Growth in Sputtered W Contacts on Silicon

1974 • 4 citations

Cited By (0)

Loading...