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Interfacial properties of very thin GaInAs/InP quantum well structures grown by metalorganic vapor phase epitaxy

Data up to Jan 2025

Published1992
Citations69
References20

Total Citations Per Year

Abstract

References (20)

Calculation of transmission tunneling current across arbitrary potential barriers

1987 • 476 citations

Chemical Mapping of Semiconductor Interfaces at Near-Atomic Resolution

1989 • 306 citations

One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy

1985 • 236 citations

Does luminescence show semiconductor interfaces to be atomically smooth?

1990 • 177 citations

Theory of photoluminescence line shape due to interfacial quality in quantum well structures

1984 • 177 citations

Atomistic models of interface structures of GaAs-Al Ga1−As (x = 0.2−1) quantum wells grown by interrupted and uninterrupted MBE

1987 • 175 citations

Cathodoluminescence atomic scale images of monolayer islands at GaAs/GaAlAs interfaces

1987 • 163 citations

Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy

1986 • 91 citations

OMVPE growth of GaInAs/InP and GaInAs/GaInAsP quantum wells

1991 • 88 citations

Interface structure and optical properties of quantum wells and quantum boxes

1987 • 64 citations

Atomic steps at GaInAs/InP interfaces grown by organometallic vapor phase epitaxy

1988 • 42 citations

Growth and analysis of quantum well structures

1991 • 40 citations

Optical properties of very narrow GaInAs/InP quantum wells grown by low-pressure metalorganic vapor phase epitaxy

1988 • 31 citations

Semiconductor interfaces: Abruptness, smoothness, and optical properties

1989 • 28 citations

Me3In preparation and zone refining of adducts for high quality InP and GaInAs MOVPE

1988 • 25 citations

Comment on ‘‘Chemical mapping of semiconductor interfaces at near-atomic resolution’’

1990 • 22 citations

Ourmazd and Cunningham reply

1990 • 18 citations

Direct imaging and theoretical modelling of the atomistic morphological and chemical structure of semiconductor heterointerfaces

1990 • 16 citations

Inequivalence of normal and inverted interfaces of molecular-beam epitaxy grown AlGaAs/GaAs quantum wells

1990 • 16 citations

Characterization of active layers in GaAs by microwave absorption

1988 • 14 citations

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