Atomistic models of interface structures of GaAs-Al Ga1−As (x = 0.2−1) quantum wells grown by interrupted and uninterrupted MBE

Dynamics of film growth of GaAs by MBE from Rheed observations

1983 • 951 citations

Optical characterization of interface disorder in multi-quantum well structures

1981 • 447 citations

One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy

1985 • 236 citations

Theory of photoluminescence line shape due to interfacial quality in quantum well structures

1984 • 177 citations

Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs Superlattices

1983 • 151 citations

Atomic-Scale Structures of Top and Bottom Heterointerfaces in GaAs–Al_xGa_1-xAs (x=0.2-1) Quantum Wells Prepared by Molecular Beam Epitaxy with Growth Interruption

1986 • 109 citations

Photoluminescence of AlGaAs/GaAs quantum wells grown by metalorganic chemical vapor deposition

1984 • 101 citations

Photoluminescence and absorption linewidth of extremely flat GaAs-AlAs quantum wells prepared by molecular beam Epitaxy including interrupted deposition for atomic layer smoothing

1986 • 61 citations

The determination of mbe growth mechanisms using dynamic rheed techniques

1986 • 45 citations