Direct imaging and theoretical modelling of the atomistic morphological and chemical structure of semiconductor heterointerfaces

Defects in epitaxial multilayers I. Misfit dislocations

1974 • 3,067 citations

Dynamics of film growth of GaAs by MBE from Rheed observations

1983 • 951 citations

Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxy

1984 • 177 citations

Cathodoluminescence atomic scale images of monolayer islands at GaAs/GaAlAs interfaces

1987 • 163 citations

Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruption

1986 • 125 citations

Reflection high energy electron diffraction intensity behavior during homoepitaxial molecular beam epitaxy growth of GaAs and implications for growth kinetics and mechanisms

1985 • 112 citations

Advances in image pickup and display

1974 • 107 citations

Well defined superlattice structures made by phase-locked epitary using RHEED intensity oscillations

1985 • 97 citations

Kinetics of relaxation and recombination of nonequilibrium carriers in GaAs: Carrier capture by impurities

1985 • 94 citations

Optimal surface and growth front of III–V semiconductors in molecular beam epitaxy: A study of kinetic processes via reflection high energy electron diffraction specular beam intensity measurements on GaAs(100)

1986 • 73 citations

Cathodoluminescence lifetime pattern of GaAs surfaces around dislocations

1981 • 34 citations

Direct imaging of the columnar structure of GaAs quantum wells

1988 • 23 citations

Photoluminescenee from AlGaAs-GaAs Single Quantum Welts with Growth Interrupted Heterointerfaces Grown on GaAs (100) and (311) Substrates at Various Growth Temperatures by Molecular Beam Epitaxy

1986 • 17 citations

Correlation of optical spectra and atomic scale structure of quantum wells

1987 • 8 citations