Ohmic contacts to p-type InP using Be-Au metallization

Ohmic contacts for GaAs devices

1967 • 493 citations

Indium Phosphide

1973 • 115 citations

Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μm

1978 • 97 citations

Small-area, high-radiance c.w. InGaAsP l.e.d.s emitting at 1.2 to 1.3 μm

1977 • 59 citations

InP‐Ga_xIn_1−xAs_yP_1−ydouble heterostructure for 1.5 μm wavelength

1978 • 59 citations

Ohmic contacts for moderately resistivep−type InP

1975 • 23 citations

InGaAsP/InP d.h. l.e.d.s for fibre-optical communications

1978 • 22 citations

Zinc contamination and misplaced p-n junctions in InP–GaInPAs d.h. lasers

1978 • 21 citations

Ideal ohmic contacts to InP

1975 • 13 citations

Be doping of liquid-phase-epitaxial InP

1979 • 10 citations