Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μm

In<inf>1-x</inf>Ga<inf>x</inf>As<inf>y</inf>P<inf>1-y</inf>/InP DH lasers fabricated on InP

1978 • 114 citations

Growth and Characterization of InP-lnGaAsP Lattice-Matched Heterojunctions

1973 • 96 citations

Phase Diagram of the In‐Ga‐As‐P Quaternary System and LPE Growth Conditions for Lattice Matching on InP Substrates

1978 • 69 citations

InP‐Ga_xIn_1−xAs_yP_1−ydouble heterostructure for 1.5 μm wavelength

1978 • 59 citations

Growth and characterization of InGaAsP–InP lattice-matched heterojunctions

1976 • 56 citations

Growth of Lattice-Matched InGaAsP/InP Double-Heterostructures by the Two-Phase Supercooled Solution Technique

1977 • 24 citations

GaInAsP/InP DH Laser Grown by Newly Designed Vertical LPE Furnace

1977 • 19 citations

500-hour CW Operation of InGaAsP/InP Double Heterostructure Lasers Fabricated on (100)-InP Substrates

1977 • 15 citations