Be doping of liquid-phase-epitaxial InP

Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ m

1976 • 276 citations

Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniques

1974 • 216 citations

Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniques

1974 • 161 citations

Room-temperature operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μm

1976 • 149 citations

Three-level oscillator: a new form of transferred-electron device

1970 • 125 citations

Indium Phosphide

1973 • 115 citations

Growth and Characterization of InP-lnGaAsP Lattice-Matched Heterojunctions

1973 • 96 citations

Efficient lattice-matched double-heterostructure LED’s at 1.1 μm from GaxIn1−xAsyP1−y

1976 • 84 citations

Liquid encapsulated czochralski pulling of InP crystals

1975 • 53 citations

GaInAsP-InP Double Heterostructure Lasers Prepared by a New LPE Apparatus

1976 • 50 citations

In situ in etching technique for l.p.e. InP

1976 • 32 citations

Planar Zn diffusion in InP

1978 • 27 citations

Zinc contamination and misplaced p-n junctions in InP–GaInPAs d.h. lasers

1978 • 21 citations

Simple pressurized chambers for liquid encapsulated czochralski crystal growth

1978 • 13 citations

Lattice matching and dislocations in LPE in1−xGaxP1−zAsz—InP heterojunctions

1977 • 12 citations

Digital filters using read-only memories

1976 • 9 citations