On the mechanisms of strain release in molecular-beam-epitaxy-grown InxGa1−xAs/GaAs single heterostructures

GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications

1985 • 3,180 citations

The Stopping and Ranges of Ions in Matter

1980 • 3,074 citations

Dislocations in solids

1979 • 2,690 citations

Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructures

1985 • 1,686 citations

Defects in epitaxial multilayers

1974 • 1,428 citations

Materials analysis by ion channeling

1982 • 918 citations

Defects associated with the accommodation of misfit between crystals

1975 • 690 citations

Crystal Interfaces. Part II. Finite Overgrowths

1963 • 664 citations

Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds

1970 • 585 citations

Relaxation of strained-layer semiconductor structures via plastic flow

1987 • 551 citations

Generation of misfit dislocations in semiconductors

1987 • 466 citations

Atomic-Scale Structure of Random Solid Solutions: Extended X-Ray-Absorption Fine-Structure Study of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:…

1982 • 440 citations

A one-dimensional SiGe superlattice grown by UHV epitaxy

1975 • 249 citations

Variation of the critical layer thickness with In content in strained InxGa1−xAs-GaAs quantum wells grown by molecular beam epitaxy

1987 • 247 citations

Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained-layer superlattices

1985 • 209 citations

Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x-ray diffraction

1987 • 197 citations

Critical Stresses for<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ge</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>Strained-Layer Plasticity

1987 • 191 citations

Role of experimental resolution in measurements of critical layer thickness for strained-layer epitaxy

1987 • 168 citations

Elastic strain and misfit dislocation density in Si0.92Ge0.08 films on silicon substrates

1977 • 164 citations

Controversy of critical layer thickness for InGaAs/GaAs strained-layer epitaxy

1988 • 164 citations

Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100)

1984 • 141 citations

Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures

1987 • 129 citations

Thermal relaxation of metastable strained-layer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ge</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="…

1985 • 101 citations

An exactly solvable model for calculating critical misfit and thickness in epitaxial superlattices: Layers of equal elastic constants and thicknesses

1988 • 100 citations

Atomistic Monte Carlo calculation of critical layer thickness for coherently strained siliconlike structures

1986 • 95 citations

Critical thickness for pseudomorphic growth of Si/Ge alloys and superlattices

1988 • 87 citations

X-ray study of misfit strain relaxation in lattice-mismatched heterojunctions

1986 • 57 citations

Intercomparison of absolute standards for RBS studies

1983 • 56 citations

Silicon strained layers grown on GaP(001) by molecular beam epitaxy

1985 • 41 citations