Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures

Defects in epitaxial multilayers

1974 • 1,428 citations

GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxy

1984 • 677 citations

Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds

1970 • 585 citations

Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained-layer superlattices

1985 • 209 citations

Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x-ray diffraction

1987 • 197 citations

Strained-layer superlattices: A brief review

1986 • 154 citations

The role of lattice misfit in epitaxy

1978 • 67 citations

X-ray study of misfit strain relaxation in lattice-mismatched heterojunctions

1986 • 57 citations

Dislocation filtering in semiconductor superlattices with lattice-matched and lattice-mismatched layer materials

1986 • 55 citations

Elimination of dark line defects in lattice-mismatched epilayers through use of strained-layer superlattices

1985 • 39 citations

Effects of strain and layer thickness on the growth of InxGa1−xAs–GaAs strained-layer superlattices

1984 • 36 citations

Photoluminescence of InxGa1-xAs-GaAs strained-layer superlattices

1985 • 36 citations

OPTICAL IMAGING OF DISLOCATIONS IN STRAINED—LAYER SUPERLATTICES AND LATTICE—MISMATCHED EPILAYERS

1985 • 14 citations