Relaxation of strained-layer semiconductor structures via plastic flow

GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxy

1984 • 677 citations

Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds

1970 • 585 citations

A one-dimensional SiGe superlattice grown by UHV epitaxy

1975 • 249 citations

Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x-ray diffraction

1987 • 197 citations

Role of experimental resolution in measurements of critical layer thickness for strained-layer epitaxy

1987 • 168 citations

Strained-layer superlattices: A brief review

1986 • 154 citations

Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures

1987 • 129 citations

Atomistic Monte Carlo calculation of critical layer thickness for coherently strained siliconlike structures

1986 • 95 citations

Impurity clustering effects on dislocation generation in silicon

1964 • 60 citations