Lateral variations of the quantum well confinement energy reflected by SEM-cathodoluminescence

Line shapes of intersubband and excitonic recombination in quantum wells: Influence of final-state interaction, statistical broadening, and momentum conservation

1990 • 162 citations

Large scale surface structure formed during GaAs (001) homoepitaxy

1994 • 137 citations

Interfacial properties of very thin GaInAs/InP quantum well structures grown by metalorganic vapor phase epitaxy

1992 • 69 citations

Interface structure and optical properties of quantum wells and quantum boxes

1987 • 64 citations

Morphological instabilities on exactly oriented and on vicinal GaAs (001) surfaces during molecular beam epitaxy

1995 • 30 citations

Step bunching and step equalization on vicinal GaAs(001) surfaces

1994 • 26 citations

Cathodoluminescence study of substrate offset effects on interface step structures of quantum wells

1989 • 21 citations

Direct observation of extended monolayer flat islands at metalorganic vapor phase epitaxy grown Al0.5Ga0.5As-GaAs single quantum well interfaces

1988 • 17 citations

Roughness of heterointerfaces and averaging effects by excitons: Interpretation of cathodoluminescence images

1995 • 13 citations

Influence of growth related thickness fluctuations on the spectral and lateral luminescence intensity distribution in GaAs quantum wells

1995 • 12 citations

Cathodoluminescence imaging of quantum wells: The influence of exciton transfer on the apparent island size

1994 • 12 citations

Depth correlated lateral variations of layer thicknesses in GaAs-AlGaAs multiple quantum wells investigated by cathodoluminescence

1995 • 10 citations

Cathodoluminescence microscopy of inhomogeneities in semiconductor heterostructures

1995 • 7 citations

Temperature dependence of the cathodoluminescence thickness map of a quantum well

1993 • 4 citations

Cited By (0)

Loading...