Line shapes of intersubband and excitonic recombination in quantum wells: Influence of final-state interaction, statistical broadening, and momentum conservation

Surface Studies by Scanning Tunneling Microscopy

1982 • 4,521 citations

Intensity of Optical Absorption by Excitons

1957 • 2,047 citations

Spontaneous and Stimulated Recombination Radiation in Semiconductors

1964 • 752 citations

Interband Optical Transitions in Extremely Anisotropic Semiconductors. I. Bound and Unbound Exciton Absorption

1966 • 508 citations

Optical characterization of interface disorder in multi-quantum well structures

1981 • 447 citations

Observation of a Many-Body Edge Singularity in Quantum-Well Luminescence Spectra

1987 • 416 citations

Room-temperature excitonic nonlinear-optical effects in semiconductor quantum-well structures

1985 • 410 citations

Dimensionality dependence of the band-gap renormalization in two- and three-dimensional electron-hole plasmas in GaAs

1987 • 250 citations

Studies of exciton localization in quantum-well structures by nonlinear-optical techniques

1985 • 209 citations

Cathodoluminescence atomic scale images of monolayer islands at GaAs/GaAlAs interfaces

1987 • 163 citations

Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruption

1986 • 125 citations

Localization induced electron-hole transition rate enhancement in GaAs quantum wells

1984 • 121 citations

Electron Interaction Effects on Recombination Spectra

1966 • 121 citations

Theory of excitonic photoluminescence linewidth in semiconductor alloys

1984 • 111 citations

Compositional Disorder‐Induced Broadening for Free Excitons in II‐VI Semiconducting Mixed Crystals

1978 • 106 citations

A Contribution to the Theory of Soft X-ray Emission Bands of Sodium

1949 • 99 citations

Anisotropy effects on excitonic properties in realistic quantum wells

1988 • 92 citations

Luminescence line shape broadening mechanisms in GaInAs/AlInAs quantum wells

1985 • 84 citations

Quantum mechanical theory of linewidths of localized radiative transitions in semiconductor alloys

1986 • 83 citations

Free excitons in room-temperature photoluminescence of GaAs-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml…

1983 • 67 citations

Evidence of no k-selection in gain spectra of quantum well AlGaAs laser diodes

1985 • 55 citations

Optical properties of InGaAs-InP single quantum wells grown by atmospheric pressure metalorganic chemical vapor deposition

1986 • 47 citations

Excitonic and electron-hole contributions to the spontaneous recombination rate of injected charge carriers in GaAs-GaAlAs multiple quantum well lasers at room temperature

1987 • 44 citations

Evidence for excitonic decay of excess charge carriers in high quality GaAs quantum wells at room temperature

1986 • 39 citations

Kinetics of island formation at the interfaces of AlGaAs/GaAs/AlGaAs quantum wells upon growth interruption

1987 • 35 citations

Direct imaging of the columnar structure of GaAs quantum wells

1988 • 23 citations

Carrier trapping in room-temperature, time-resolved photoluminescence of a GaAs/AlxGa1−xAs multiple quantum well structure grown by metalorganic chemical vapor deposition

1985 • 21 citations

Localization-dependent thermalization of excitons in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">GaAs</mml:mi><mml:mo>/</mml:mo><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></…

1989 • 21 citations

Influence of the As:Ga flux ratio on growth rate, interface quality, and impurity incorporation in AlGaAs/GaAs quantum wells grown by molecular beam epitaxy

1989 • 19 citations

Influence of coupling of wells on spontaneous emission line shape in GaAs/GaAlAs multiple quantum wells

1988 • 15 citations

Detailed atomic scale structure of AlInAs/GaInAs quantum wells

1989 • 13 citations

Visualization of the transition from 2d to 3d and from non-k-conservation to k-conservation in the lineshapes of quantum wells and true superlattices

1990 • 11 citations

Impact of well coupling on the spontaneous emission properties of GaAs/AlGaAs multiple-quantum-well structures

1989 • 9 citations

NONCOMMUTATIVE STRUCTURE OF GaAs QUANTUM WELL INTERFACES AND INEQUIVALENT INTERFACE IMPURITY INCORPORATION

1987 • 3 citations

Impact of MBE-growth rate on optical properties of AlGaAs/GaAs quantum well structures

1989 • 1 citations