Surface reaction probability of film-producing radicals in silane glow discharges

Ion-beam-induced epitaxial vapor-phase growth: A molecular-dynamics study

1987 • 307 citations

Principles of surface chemistry

1972 • 230 citations

Film formation mechanisms in the plasma deposition of hydrogenated amorphous silicon

1986 • 227 citations

Mono- and disilicon radicals in silane and silane-argon dc discharges

1986 • 195 citations

Glow-discharge amorphous silicon: Growth process and structure

1987 • 170 citations

Neutral radical deposition from silane discharges

1988 • 161 citations

Sticking and recombination of the SiH3 radical on hydrogenated amorphous silicon: The catalytic effect of diborane

1989 • 151 citations

Reactions of SiH2(X̄1A1) with H2, CH4, C2H4, SiH4 and Si2H6 at 298 K

1985 • 149 citations

The 147-nm photolysis of monosilane

1979 • 133 citations

Surface reaction and recombination of the SiH3 radical on hydrogenated amorphous silicon

1987 • 116 citations

Dissociative excitation of SiH4, SiD4, Si2H6 and GeH4 by 0–100 eV electron impact

1983 • 115 citations

Origin of emitting species in the plasma deposition of a-Si:H alloys

1981 • 109 citations

a-Si:H Deposition from SiH₄and Si₂H₆rf-Discharges: Pressure and Temperature Dependence of Film Growth in Relation to α-γ Discharge Transition

1988 • 109 citations

Production mechanism and reactivity of the SiH radical in a silane plasma

1984 • 103 citations

Laser studies of the reactivity of SiH with the surface of a depositing film

1989 • 89 citations

Diffusion Coefficient and Reaction Rate Constant of the SiH₃ Radical in Silane Plasma

1989 • 84 citations

Fundamental mechanisms in silane plasma decompositions and amorphous silicon deposition

1983 • 83 citations

I n s i t u investigation of the growth of rf glow-discharge deposited amorphous germanium and silicon films

1987 • 80 citations

Amorphous silicon semiconductors-pure and hydrogenated

1987 • 53 citations

Optical emission spectroscopy: Toward the identification of species in the plasma deposition of hydrogenated amorphous silicon alloys

1980 • 51 citations

Simulation of the bulk and surface properties of amorphous hydrogenated silicon deposited from silane plasmas

1989 • 45 citations

Spatial distribution of a-Si:H film-producing radicals in silane rf glow discharges

1990 • 41 citations

Amorphous silicon deposition rates in diode and triode discharges

1986 • 32 citations

Hydrogenated amorphous silicon studied by scanning tunneling microscopy

1988 • 27 citations

Atom- and radical-surface sticking coefficients measured using resonance-enhanced multiphoton ionization

1989 • 26 citations

Sticking coefficient of the SiH2 free radical on a hydrogenated silicon-carbon surface

1989 • 22 citations

Monte Carlo simulations of plasma-deposited amorphous silicon

1988 • 19 citations

Apparatus Design for Glow-Discharge a-Si: H Film-Deposition

1987 • 12 citations