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a-Si:H Deposition from SiH4and Si2H6rf-Discharges: Pressure and Temperature Dependence of Film Growth in Relation to α-γ Discharge Transition

Data up to Jan 2025

Published1988
Citations109
References39

Total Citations Per Year

Abstract

References (39)

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a-Si:H Deposition from SiH4and Si2H6rf-Discharges: Pressure and Temperature Dependence of… (1988) – Japanese Journal of Applied Physics | Metascience Observatory Explorer