Spatially resolved study of dislocations in Si-doped LEC GaAs by DSL, PL and EBIC
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References (16)
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Combined use of EBIC and DSL photoetching for the quantitative assessment of defect properties in LEC GaAs
1990 • 11 citations
Complementary DSL, EBIC and PL study of grown-in defects in Si-doped GaAs crystals grown under Ga- and As-rich conditions by LEC method
1990 • 11 citations
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