Complementary DSL, EBIC and PL study of grown-in defects in Si-doped GaAs crystals grown under Ga- and As-rich conditions by LEC method

Crystal growth '78

1979 • 370 citations

Arsenic precipitation at dislocations in GaAs substrate material

1980 • 139 citations

Selective etching and photoetching of GaAs in CrO3-HF aqueous solutions

1986 • 85 citations

Selective etching and photoetching of {100} gallium arsenide in CrO3-HF aqueous solutions

1983 • 85 citations

Kinetics and Morphology of GaAs Etching in Aqueous CrO3 ‐ HF Solutions

1986 • 66 citations

Native acceptor levels in Ga-rich GaAs

1989 • 54 citations

Crystallographic Defects in (001) GaAs Epitaxial Layers Grown by MOCVD

1987 • 35 citations

Structural and electrical properties ofn-type bulk gallium arsenide grown from non-stoichiometric melts

1989 • 28 citations

Spatially resolved electrical and spectroscopic studies around dislocations in GaAs single crystals

1984 • 27 citations

Electron-beam-induced current and photoetching investigations of dislocations and impurity atmospheres in n-type liquid-encapsulated Czochralski GaAs

1989 • 24 citations

Study of Segregation Inhomogeneities in GaAs by Means of DSL Photoetching and EBIC Measurements

1989 • 23 citations

Influence of substrate defects on the structure of epitaxial GaAs grown by MOCVD

1988 • 13 citations

Influence of melt composition on electron mobility in Si-doped LEC GaAs

1989 • 12 citations

High resolution electron microscopy and etching study of twins in GaAs

1987 • 11 citations