Mechanisms of radical production in CF3Cl, CF3Br, and related plasma etching gases: The role of added oxidants

Plasma etching—A discussion of mechanisms

1979 • 559 citations

Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmas

1978 • 533 citations

The reaction of fluorine atoms with silicon

1981 • 322 citations

Plasma etching of Si and SiO2 in SF6–O2 mixtures

1981 • 265 citations

Anisotropic plasma etching of polysilicon

1980 • 136 citations

Energy balance in low-pressure gas discharges

1973 • 103 citations

The plasma oxidation of CF4 in a tubular-alumina fast-flow reactor

1979 • 94 citations

The effect of added hydrogen on the rf discharge chemistry of CF4, CF3H, and C2F6

1979 • 82 citations

The absorption spectrum of CF2

1950 • 67 citations

Etching and film formation in CF3Br plasmas: some qualitative observations and their general implications

1980 • 43 citations

Mechanisms of radical production in radiofrequency discharges of CF3Cl, CF3Br, and certain other plasma etchants: Spectrum of a transient species

1980 • 38 citations

Aluminum Etching in Carbon Tetrachloride Plasmas

1980 • 37 citations

Chemical Reactivity of CF₄ and C₂F₄ Induced by Electrical Discharge

1955 • 7 citations