Imaging of stresses in GaAs diode lasers using polarization-resolved photoluminescence

Piezo-Electroreflectance in Ge, GaAs, and Si

1968 • 848 citations

Material parameters of In1−xGaxAsyP1−y and related binaries

1982 • 769 citations

Fundamentals of Machine Component Design

1983 • 440 citations

Photoelastic waveguides and their effect on stripe-geometry GaAs/Ga1−xAlxAs lasers

1979 • 154 citations

Interface stress of AlxGa1−xAs–GaAs layer structures

1973 • 131 citations

Local‐Oxidation‐Induced Stress Measured by Raman Microprobe Spectroscopy

1990 • 52 citations

Improvement in operation lives of GaAlAs visible lasers by introducing GaAlAs buffer layers

1981 • 36 citations

Bonding stress measurements from the degree of polarization of facet emission of AlGaAs superluminescent diodes

1991 • 29 citations

Spatially and polarization resolved electroluminescence of 13-μm InGaAsP semiconductor diode lasers

1989 • 21 citations

Effect of macroscopic stress on accelerated aging of GaInAsP channeled substrate buried heterostructure lasers

1989 • 7 citations