Bonding stress measurements from the degree of polarization of facet emission of AlGaAs superluminescent diodes

Semiconducting and other major properties of gallium arsenide

1982 • 2,395 citations

Piezo-Electroreflectance in Ge, GaAs, and Si

1968 • 848 citations

Material parameters of In1−xGaxAsyP1−y and related binaries

1982 • 769 citations

Thermal expansion of some diamondlike crystals

1975 • 726 citations

Elasticity : theory and applications

1993 • 648 citations

Fundamentals of Machine Component Design

1983 • 440 citations

HERMITE-GAUSSIAN MODE PATTERNS IN GaAs JUNCTION LASERS

1967 • 186 citations

High-power superluminescent diodes

1988 • 119 citations

Degradation of III–V Opto‐Electronic Devices

1988 • 118 citations

Behavior of threshold current and polarization of stimulated emission of GaAs injection lasers under uniaxial stress

1973 • 52 citations

Local‐Oxidation‐Induced Stress Measured by Raman Microprobe Spectroscopy

1990 • 52 citations

Effects of stress on threshold, wavelength, and polarization of the output of InGaAsP semiconductor diode lasers

1988 • 44 citations

Effect of uniaxial stress on optical gain in semiconductors

1984 • 40 citations

The effects of processing stresses on residual degradation in long-lived Ga1−xAlxAs lasers

1979 • 40 citations

Effect of stress on the polarization of stimulated emission from injection lasers

1984 • 39 citations

Improvement in operation lives of GaAlAs visible lasers by introducing GaAlAs buffer layers

1981 • 36 citations

Dark-line defects induced by mechanical bending in GaAs-Ga1−xAlxAs double-heterostructure wafers

1976 • 35 citations

Temperature-dependent polarization behavior of semiconductor lasers

1984 • 35 citations

Reliability in InGaAsP/InP buried heterostructure 1.3 µm lasers

1983 • 33 citations

Polarization of the output of InGaAsP semiconductor diode lasers

1989 • 31 citations

THE EFFECT OF UNIAXIAL STRAIN ON THE THRESHOLD CURRENT AND OUTPUT OF GaAs LASERS

1963 • 31 citations

1.3-μm Laser Reliability Determination for Submarine Cable Systems

1985 • 28 citations

Strain-enhanced luminescence degradation in GaAs/GaAlAs double-heterostructure lasers revealed by photoluminescence

1979 • 28 citations

Strain-related degradation phenomena in long-lived GaAlAs stripe lasers

1981 • 26 citations

Spatially and polarization resolved electroluminescence of 13-μm InGaAsP semiconductor diode lasers

1989 • 21 citations

The design and realization of a high reliability semiconductor laser for single-mode fiber-optical communication links

1988 • 16 citations

Reduction of the threshold current of InGaAsP/lnP heterolasers by unidirectional compression

1984 • 14 citations

Stress‐Induced Dark Line Defect Formation in GaAlAs : Si LED's

1981 • 11 citations

Bonding pad induced stresses in (Al,Ga)As double heterostructure lasers

1983 • 11 citations

Improved lifetimes of (GaAl)As visible (740 nm) lasers by reducing bonding stress

1983 • 9 citations

Effects of Uniaxial Stress on the Double Heterostructure Lasers

1973 • 8 citations

Effect of macroscopic stress on accelerated aging of GaInAsP channeled substrate buried heterostructure lasers

1989 • 7 citations

Catastrophic optical damage in GaAlAs/GaAs laser diodes

1987 • 6 citations

Role of mechanical stresses in gradual degradation of light-emitting diodes and injection lasers

1975 • 5 citations

Catastrophic optical damage in GaAlAs/GaAs laser diodes

1987 • 5 citations