MOCVD growth of AlGaInP at atmospheric pressure using triethylmetals and phosphine

Effect of mismatch strain on band gap in III-V semiconductors

1985 • 249 citations

Room-temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition

1986 • 191 citations

Room-temperature CW operation of AlGaInP double-heterostructure visible lasers

1985 • 156 citations

Optical properties of (AlAs)n(GaAs)n superlattices grown by metalorganic chemical vapor deposition

1985 • 141 citations

Room-temperature continuous-wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metalorganic chemical vapor deposition

1985 • 128 citations

A new approach to MOCVD of indium phosphide and gallium-indium arsenide

1981 • 121 citations

Photoluminescence of AlGaAs/GaAs quantum wells grown by metalorganic chemical vapor deposition

1984 • 101 citations

Conduction Bands in In1−xAlxP

1970 • 92 citations

OMVPE growth of InP using TMIn

1983 • 75 citations

MOCVD growth of (AlxGa1−x)yIn1−yP and double heterostructures for visible light lasers

1984 • 53 citations

Room-temperature continuous-wave operation of an AlGaInP mesa stripe laser

1986 • 41 citations

Organometallic vapor phase epitaxial growth of AlGaInP

1985 • 34 citations

661.7 nm room-temperature CW operation of AlGaInP double-heterostructure lasers with aluminium-containing quaternary active layer

1985 • 26 citations

Orientation Dependence of LPE Growth Behavior of Ga_xIn_1-xP on (100) and (111)B GaAs Substrates

1982 • 20 citations

A new cracking method for group V hydrides in the MOCVD growth using triethylindium (TEI)

1984 • 9 citations