OMVPE growth of InP using TMIn

High purity GaAs prepared from trimethylgallium and arsine

1981 • 199 citations

Thermodynamic aspects of organometallic vapor phase epitaxy

1983 • 141 citations

A new approach to MOCVD of indium phosphide and gallium-indium arsenide

1981 • 121 citations

Growth of high-purity GaAs epilayers by MOCVD and their applications to microwave MESFET's

1981 • 106 citations

The Use of Metalorganics in the Preparation of Semiconductor Materials

1973 • 94 citations

Low pressure metalorganic chemical vapor deposition of InP and related compounds

1983 • 93 citations

The use of a metalorganic compound for the growth of InP-epitaxial layers

1981 • 63 citations

Metalorganic vapor phase epitaxial growth of In1−xGaxP

1981 • 49 citations

The preparation of Gal-x Inx As by organometallic pyrolysis for homojunction LED’S

1980 • 45 citations

Properties of InP Films Grown by Organometallic VPE Method

1980 • 37 citations

Characterization of GaAs epitaxial layers grown in a radiation heated Mo-CVD reactor

1981 • 27 citations

InP MESFET Grown by MOCVD

1982 • 24 citations