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Raman Measurement of Lattice Temperature during Pulsed Laser Heating of Silicon

Data up to Jan 2025

Published1980
Citations207
References20

Total Citations Per Year

Abstract

References (20)

Selected Values of the Thermodynamic Properties of the Elements

1973 • 2,343 citations

Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°K

1955 • 1,005 citations

A melting model for pulsing-laser annealing of implanted semiconductors

1979 • 392 citations

Time-resolved reflectivity of ion-implanted silicon during laser annealing

1978 • 329 citations

Nonthermal pulsed laser annealing of Si; plasma annealing

1979 • 281 citations

Dynamics of dense laser-induced plasmas

1980 • 280 citations

Temperature rise induced by a laser beam II. The nonlinear case

1978 • 261 citations

Resonant Raman scattering in silicon

1975 • 200 citations

Reasons to believe pulsed laser annealing of Si does not involve simple thermal melting

1979 • 155 citations

Laser Annealing of Ion-Implanted Semiconductors

1979 • 152 citations

Theoretical analysis of thermal and mass transport in ion-implanted laser-annealed silicon

1978 • 147 citations

Optical heating in semiconductors

1980 • 126 citations

Some features of laser annealing of implanted silicon layers

1978 • 111 citations

Segregation Effects in Cu-Implanted Si after Laser-Pulse Melting

1978 • 81 citations

A computer simulation of laser annealing silicon at 1.06 μm

1979 • 52 citations

Role of carrier diffusion in lattice heating during pulsed laser annealing

1980 • 49 citations

Dynamic behavior of pulsed-laser annealing in ion-implanted silicon

1979 • 40 citations

Cohesion of solids under laser irradiation

1980 • 35 citations

A transient optical reflectivity study of laser annealing of ion-implanted silicon: Thresholds and kinetics

1979 • 31 citations

Photoluminescence at high exciton densities in cuprous oxide

1976 • 13 citations

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