Raman Measurement of Lattice Temperature during Pulsed Laser Heating of Silicon
Data up to Jan 2025
Total Citations Per Year
Abstract
References (20)
Selected Values of the Thermodynamic Properties of the Elements
1973 • 2,343 citations
Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°K
1955 • 1,005 citations
A melting model for pulsing-laser annealing of implanted semiconductors
1979 • 392 citations
Time-resolved reflectivity of ion-implanted silicon during laser annealing
1978 • 329 citations
Nonthermal pulsed laser annealing of Si; plasma annealing
1979 • 281 citations
Dynamics of dense laser-induced plasmas
1980 • 280 citations
Temperature rise induced by a laser beam II. The nonlinear case
1978 • 261 citations
Resonant Raman scattering in silicon
1975 • 200 citations
Reasons to believe pulsed laser annealing of Si does not involve simple thermal melting
1979 • 155 citations
Laser Annealing of Ion-Implanted Semiconductors
1979 • 152 citations
Theoretical analysis of thermal and mass transport in ion-implanted laser-annealed silicon
1978 • 147 citations
Optical heating in semiconductors
1980 • 126 citations
Some features of laser annealing of implanted silicon layers
1978 • 111 citations
Segregation Effects in Cu-Implanted Si after Laser-Pulse Melting
1978 • 81 citations
A computer simulation of laser annealing silicon at 1.06 μm
1979 • 52 citations
Role of carrier diffusion in lattice heating during pulsed laser annealing
1980 • 49 citations
Dynamic behavior of pulsed-laser annealing in ion-implanted silicon
1979 • 40 citations
Cohesion of solids under laser irradiation
1980 • 35 citations
A transient optical reflectivity study of laser annealing of ion-implanted silicon: Thresholds and kinetics
1979 • 31 citations
Photoluminescence at high exciton densities in cuprous oxide
1976 • 13 citations