Electronic Processes and Excess Currents in Gold-Doped Narrow Silicon Junctions

Statistics of the Recombinations of Holes and Electrons

1952 • 6,023 citations

Electron-Hole Recombination in Germanium

1952 • 2,561 citations

New Phenomenon in Narrow Germanium<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi><mml:mo>−</mml:mo><mml:mi>n</mml:mi></mml:math>Junctions

1958 • 1,453 citations

Solid Solubilities of Impurity Elements in Germanium and Silicon*

1960 • 1,348 citations

Theory of Tunneling

1961 • 972 citations

Cascade Capture of Electrons in Solids

1960 • 894 citations

Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus

1949 • 889 citations

Advances in Electronics and Electron Physics

1969 • 800 citations

Fine Structure in the Absorption-Edge Spectrum of Si

1958 • 599 citations

Excess Tunnel Current in Silicon Esaki Junctions

1961 • 325 citations

Progress in Semiconductors.

1961 • 303 citations

Impurity Band Conduction in Germanium and Silicon

1956 • 239 citations

Giant traps

1959 • 151 citations

A new device using the tunneling process in narrow p-n junctions

1960 • 141 citations

CXLIII. On conduction in impurity bands

1953 • 132 citations

Direct Observation of Phonons During Tunneling in Narrow Junction Diodes

1959 • 115 citations

Esaki Tunneling

1959 • 101 citations

Excess Noise in Narrow Germanium p-n Junctions

1958 • 67 citations

Solid State Physics In Electronics and Telecommunications

1961 • 28 citations

Evidence for States (Bands) in the Forbidden Gap of Degenerate GaAs and InP—Secondary Tunnel Currents and Negative Resistances

1961 • 19 citations