Excess Tunnel Current in Silicon Esaki Junctions
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Abstract
References (11)
New Phenomenon in Narrow Germanium<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi><mml:mo>−</mml:mo><mml:mi>n</mml:mi></mml:math>Junctions
1958 • 1,453 citations
Properties of Silicon Doped with Iron or Copper
1957 • 213 citations
A new device using the tunneling process in narrow p-n junctions
1960 • 141 citations
Internal Field Emission at Narrow Silicon and Germanium<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi><mml:mo>−</mml:mo><mml:mi>n</mml:mi></mml:math>Junctions
1960 • 120 citations
Direct Observation of Phonons During Tunneling in Narrow Junction Diodes
1959 • 115 citations
One-Dimensional Impurity Bands
1958 • 112 citations
Excess Noise in Narrow Germanium p-n Junctions
1958 • 67 citations
Observation of Direct Tunneling in Germanium
1959 • 52 citations
Theory of impurity bands with randomly distributed centers
1954 • 51 citations
Pressure Dependence of the Current-Voltage Characteristics of Esaki Diodes
1960 • 39 citations
Fast Neutron Bombardment of Germanium and Silicon Esaki Diodes
1960 • 18 citations