Leakage studies in high-density dynamic MOS memory devices
Data up to Jan 2025
Total Citations Per Year
Abstract
References (9)
On the determination of minority carrier lifetime from the transient response of an MOS capacitor
1967 • 222 citations
Interpretation of surface and bulk effects using the pulsed MIS capacitor
1971 • 159 citations
Basic equations for statistics, recombination processes, and photoconductivity in amorphous insulators and semiconductors
1972 • 123 citations
On the separation of bulk and surface components of lifetime using the pulsed MOS capacitor
1970 • 111 citations
The gate-controlled diode s0 measurement and steady-state lateral current flow in deeply depleted MOS structures
1974 • 49 citations
Thermal carrier generation in charge-coupled devices
1975 • 30 citations
Defect-controlled generation in deeply depleted MOS-C structures
1975 • 20 citations
Characterization of reverse-bias leakage currents and their effect on the holding time characteristics of MOS dynamic RAM circuits
1977 • 15 citations
The charge-coupled RAM cell concept
1976 • 15 citations