On the separation of bulk and surface components of lifetime using the pulsed MOS capacitor

Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions

1966 • 434 citations

On the determination of minority carrier lifetime from the transient response of an MOS capacitor

1967 • 222 citations

Measurements of the recombination velocity at germanium surfaces

1954 • 149 citations

Carrier concentration and minority carrier lifetime measurement in semiconductor epitaxial layers by the mos capacitance method

1966 • 59 citations

Minority carrier lifetime determination from inversion layer transient response

1967 • 54 citations

Different mechanisms affecting the inversion layer transient response

1968 • 30 citations

Zu Relaxationseffekten bei epitaktischen Si‐MOS‐Strukturen

1968 • 8 citations