Barrier Heights of Junctions between Amorphous Si-Ge-B and Crystalline GaAs

Surface States and Barrier Height of Metal-Semiconductor Systems

1965 • 1,321 citations

Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States

1980 • 720 citations

Electronic properties of substitutionally doped amorphous Si and Ge

1976 • 708 citations

Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers

1969 • 399 citations

The Richardson constant for thermionic emission in Schottky barrier diodes

1965 • 375 citations

Schottky barrier height of n-InxGa1−xAs diodes

1973 • 283 citations

Depletion Capacitance and Diffusion Potential of Gallium Phosphide Schottky-Barrier Diodes

1966 • 177 citations

Silicon-Germanium-Boron Ternary Amorphous Alloy

1982 • 32 citations

Amorphous Silicon-Germanium-Boron Alloy Applied to Low-Loss and High-Speed Diodes

1982 • 13 citations

A Large Barrier Height Schottky Contact between Amorphous Si–Ge–B and GaAs

1983 • 9 citations

Submicron device fabrication techniques utilizing amorphous silicon alloys

1983 • 4 citations

VA-6 Large-barrier-height amorphous Si-Ge-B/GaAs Schottky contacts and GaAs-MASFET's

1984 • 1 citations