Stabilization of MOS devices
Data up to Jan 2025
Total Citations Per Year
Abstract
References (14)
Ion Transport Phenomena in Insulating Films
1965 • 516 citations
Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions
1966 • 434 citations
The effects of oxide traps on the MOS capacitance
1965 • 430 citations
DENSITY OF SiO2–Si INTERFACE STATES
1966 • 404 citations
An investigation of instability and charge motion in metal-silicon oxide-silicon structures
1966 • 132 citations
Sodium distribution in thermal oxide on silicon by radiochemical and MOS analysis
1966 • 126 citations
Polarization Phenomena and Other Properties of Phosphosilicate Glass Films on Silicon
1966 • 124 citations
Stabilization of SiO2 Passivation Layers with P2O5
1964 • 120 citations
Investigation of Silicon-Silicon Dioxide Interface Using MOS Structure
1966 • 101 citations
Field effect studies of the oxidized silicon surface
1966 • 28 citations
Thermal Oxidation of Silicon: Growth Mechanism and Interface Properties
1967 • 22 citations
Hydrogen-induced surface space-charge regions in oxide-protected silicon
1965 • 14 citations
Thermal Oxidation of Silicon
1988 • 8 citations
Sodium distribution in oxide by radiochemical analysis and its effect on silicon surface potential
1965 • 2 citations