Cathodoluminescence observation of extended monolayer-flat terraces at the heterointerface of GaInAs/InP single quantum wells grown by metalorganic vapor phase epitaxy

Optical characterization of interface disorder in multi-quantum well structures

1981 • 447 citations

Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy

1986 • 169 citations

Cathodoluminescence atomic scale images of monolayer islands at GaAs/GaAlAs interfaces

1987 • 163 citations

Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy

1986 • 91 citations

Interface structure and optical properties of quantum wells and quantum boxes

1987 • 64 citations

Optical properties of InGaAs-InP single quantum wells grown by atmospheric pressure metalorganic chemical vapor deposition

1986 • 47 citations

Recent advances in MOCVD growth of InxGa1-xAsyP1-y alloys

1984 • 43 citations

Atomic steps at GaInAs/InP interfaces grown by organometallic vapor phase epitaxy

1988 • 42 citations

Optical investigation of atomic steps in ultrathin InGaAs/InP quantum wells grown by vapor levitation epitaxy

1989 • 41 citations

Single-monolayer quantum wells of GaInAs in InP grown by metalorganic vapor phase epitaxy

1990 • 38 citations

Atomic abruptness in InGaAsP/InP quantum well heterointerfaces grown by low-pressure organometallic vapor phase epitaxy

1988 • 34 citations

Cathodoluminescence study of substrate offset effects on interface step structures of quantum wells

1989 • 21 citations

Direct observation of extended monolayer flat islands at metalorganic vapor phase epitaxy grown Al0.5Ga0.5As-GaAs single quantum well interfaces

1988 • 17 citations

Sharp interfaces in GaInAsP/InP single quantum wells grown by MOVPE

1988 • 8 citations